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NCP512SQ27T1G

Onsemi

NCP512SQ27T1G by Onsemi

NCP512SQ27T1G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 2.7V and max output current of 0.08A. It operates in temperatures ranging from -40 to 85 °C, making it suitable for various applications requiring stable voltage regulation in compact designs. The package style is small outline, thin profile, shrink pitch, ideal for surface mount assembly.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

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Goldney Electronics S.L.

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Digiode

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AZTECH Wire

Italy . 553 parts In-Stock

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Kepictronics

USA . 34,226 parts In-Stock

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Kulean Microsystems

USA . 8,345 parts In-Stock

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Problanco Electronics

Mexico . 7,729 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Corphita

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Vigor

Singapore . 512 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 56 parts In-Stock

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UHIMA Technologies

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Overview

Discover the NCP512SQ27T1G by Onsemi, a high-quality Fixed Regulator that offers reliable performance and precise voltage regulation. Manufactured by Onsemi, a trusted name in the industry known for cutting-edge technology and innovation, this LDO regulator is perfect for a variety of applications. With a compact design and excellent thermal performance, this regulator ensures stable power supply with minimal dropout voltage. Experience the value and benefits of the NCP512SQ27T1G, offering customers peace of mind and superior performance in a wide range of electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of Plastic/Epoxy material in the package body makes the product lightweight and durable, perfect for portable electronics.

Maximum Dropout Voltage-1: 1.3 V

With a low maximum dropout voltage, this regulator can provide a stable output even when the input voltage is close to the output voltage, ensuring reliable performance.

Surface Mount: YES

Being surface mountable makes installation of this regulator easy and efficient, saving space on the PCB and facilitating automated assembly processes.

Operating Temperature (TJ-Max): 150 °C

The wide operating temperature range of up to 150 °C ensures the regulator can be used in various environments without compromising performance.

Technology: CMOS

The CMOS technology used in this regulator results in low power consumption and high efficiency, making it suitable for battery-operated devices.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into the PCB layout, optimizing space and improving overall design aesthetics.

Terminal Form: GULL WING

The Gull Wing terminal form provides secure connections with the PCB, reducing the risk of solder joint failures and ensuring reliable operation.

Packing Method: TR

The TR packing method ensures convenient handling and storage of the regulators, making them suitable for high-volume production and distribution.

Nominal Output Voltage-1: 2.7 V

The 2.7V output voltage is commonly used in many electronic devices, making this regulator versatile and compatible with a wide range of applications.

No. of Terminals: 5

The 5 terminals provide multiple connection points for input, output, and ground, enabling flexibility in circuit design and ensuring stable performance.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCP512SQ27T1G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.3 V

Nominal Dropout Voltage-1:

.2 V

Maximum Input Voltage Absolute:

6 V

Maximum Input Voltage:

6 V

Minimum Input Voltage:

3.7 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Maximum Line Regulation:

.0069 %

Maximum Load Regulation:

.0632 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

150 Cel

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current-1:

.08 A

Maximum Output Voltage-1:

2.781 V

Minimum Output Voltage-1:

2.619 V

Nominal Output Voltage-1:

2.7 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Maximum Voltage Tolerance:

3 %

Width:

1.25 mm

Trade Compliance

NCP512SQ27T1G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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