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NCP4300ADG

Onsemi

NCP4300ADG by Onsemi

NCP4300ADG by Onsemi is an Operational Amplifier with 3000uV Max Input Offset Voltage, 60dB CMRR, and 25000 Min Voltage Gain. Ideal for applications requiring precise signal amplification in a compact design. Features include 8 terminals, Vsup of 5V, and operating temperature range of 0-105 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 45,000 parts In-Stock

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Vyrian

USA . 7,919 parts In-Stock

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Digiode

USA . 1,628 parts In-Stock

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Cogito LLC

Ukraine . 15 parts In-Stock

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Vigor

Singapore . 887 parts In-Stock

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$0.300

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887

$0.300

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Ampacity Inc.

Singapore . 1,106 parts In-Stock

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$3.410

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$3.410

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AZTECH Wire

Italy . 335 parts In-Stock

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$15.620

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TANS Electronics

Latvia . 8,374 parts In-Stock

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Kulean Microsystems

USA . 7,084 parts In-Stock

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Problanco Electronics

Mexico . 6,488 parts In-Stock

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SupplyDigital Components

Austria . 6,197 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Perfect Parts

USA . 1,917 parts In-Stock

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UHIMA Technologies

Türkiye . 568 parts In-Stock

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Corphita

USA . 379 parts In-Stock

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Corohmni

South Africa . 283 parts In-Stock

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Microchip USA

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Overview

Discover the NCP4300ADG by Onsemi, a high-quality operational amplifier designed to deliver exceptional performance in various applications. Manufactured by Onsemi, known for its reliable and innovative solutions, this op amp offers customers value and benefits like precise signal amplification, low input offset voltage, and versatile use in electronic circuits. Whether you're designing audio equipment, instrumentation, or control systems, the NCP4300ADG provides the reliability and efficiency you need to bring your project to life. Choose Onsemi for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and resistance to environmental factors, making the product suitable for a variety of applications.

Maximum Input Offset Voltage: 3000 uV

Low offset voltage helps in minimizing errors in signal processing, improving overall performance.

Maximum Average Bias Current (IIB): -0.15 uA

Low bias current results in lower power consumption and improved accuracy in signal amplification.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and effort.

Nominal Common Mode Reject Ratio: 60 dB

High common mode rejection ratio helps in reducing noise and interference from the input signal, leading to cleaner output.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes the product compatible with a wide range of circuits and applications.

Minimum Slew Rate: 0.3 V/us

Fast slew rate ensures quick response to input changes, making the amplifier suitable for applications requiring rapid signal processing.

Nominal Unity Gain Bandwidth: 700 kHz

High unity gain bandwidth allows for amplification of higher frequency signals with minimal distortion and phase shift.

Technology: BIPOLAR

Bipolar technology offers high performance and low noise characteristics, making the amplifier reliable for precision applications.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is designed for high gain, accuracy, and versatility in various signal processing tasks.

Technical Specifications

Operational Amplifiers (Op Amps) NCP4300ADG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/30 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

700 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.3 V/us

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

-150 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

36 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Rail

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

NCP4300ADG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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