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NCP4300AD

Onsemi

NCP4300AD by Onsemi

NCP4300AD by Onsemi is a dual operational amplifier with 3000uV max input offset voltage, 60dB CMRR, and 700kHz unity gain bandwidth. Ideal for applications requiring precise signal amplification in compact designs due to its small outline package and low bias current of 0.15uA at 25 °C.

Median Price

$0.291

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 96 parts In-Stock

1+ parts

-

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$0.291

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$0.241

10k+ parts

$0.215

96

-

$0.291

$0.241

$0.215

Distributors (In-Stock)

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Digiode

USA . 2,085 parts In-Stock

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$0.226

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2,085

$0.226

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Chip Stock

USA . 18,000 parts In-Stock

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18,000

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Vyrian

USA . 10,446 parts In-Stock

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Cyclops Electronics Ltd

UK . 98 parts In-Stock

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R&J Components

USA . 90 parts In-Stock

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Corphita

USA . 1,221 parts In-Stock

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$0.214

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$0.214

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Vigor

Singapore . 789 parts In-Stock

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$0.230

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789

$0.230

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Corohmni

South Africa . 52 parts In-Stock

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$0.238

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52

$0.238

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AZTECH Wire

Italy . 554 parts In-Stock

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$16.320

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SupplyDigital Components

Austria . 7,901 parts In-Stock

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Kulean Microsystems

USA . 5,194 parts In-Stock

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TANS Electronics

Latvia . 3,485 parts In-Stock

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Problanco Electronics

Mexico . 2,855 parts In-Stock

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RC Electronics

USA . 1,500 parts In-Stock

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Microchip USA

USA . 458 parts In-Stock

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UHIMA Technologies

Türkiye . 312 parts In-Stock

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Kepictronics

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Overview

Elevate your electronic designs with the NCP4300AD operational amplifier from Onsemi. Known for their high-quality products, Onsemi delivers reliable and efficient components that are perfect for a wide range of applications. This versatile op amp offers exceptional value with its low input offset voltage and minimal bias current, providing customers with precise and stable performance. Whether you're working on audio equipment, instrumentation, or sensor interfaces, the NCP4300AD is sure to exceed your expectations. Trust Onsemi for superior quality and unmatched performance in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 3000 uV

Ensures minimal error in the output signal due to input voltage differences.

Nominal Common Mode Reject Ratio: 60 dB

Allows for efficient rejection of common mode noise in the input signal.

Nominal Supply Voltage / Vsup (V): 5

Ideal for low power applications and can be easily integrated into circuits with a 5V power supply.

Minimum Slew Rate: 0.3 V/us

Indicates the ability of the amplifier to respond quickly to changes in the input signal, making it suitable for applications requiring high-speed operation.

Minimum Voltage Gain: 25000

Provides a high voltage gain, making it suitable for applications where amplifying weak signals is required.

Technology: BIPOLAR

Offers good linearity and low noise performance, making it a reliable choice for various analog circuit applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for high performance in signal processing applications, offering precise amplification and filtering capabilities.

Technical Specifications

Operational Amplifiers (Op Amps) NCP4300AD attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/30 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

700 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.3 V/us

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

-150 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

36 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Rail

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

NCP4300AD Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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