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NCP1400ASN33T1

Onsemi

NCP1400ASN33T1 by Onsemi

NCP1400ASN33T1 by Onsemi is a voltage-mode switching regulator with a max output current of 0.4A and a max switching frequency of 216kHz. It operates in an industrial temperature range from -40 °C to 85°C, making it suitable for various boost applications requiring precise voltage control in compact designs.

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Vyrian

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ComSIT Distribution GmbH

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R&J Components

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Digiode

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AZTECH Wire

Italy . 1,034 parts In-Stock

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Kepictronics

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

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RC Electronics

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Problanco Electronics

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Corphita

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Futuretech Components

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Vigor

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UHIMA Technologies

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Microchip USA

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Overview

Enhance your electronic designs with the NCP1400ASN33T1 by Onsemi, a premium switching regulator that offers superior performance and reliability. Manufactured by the trusted brand Onsemi, this product belongs to the category of Switching Regulators & Controllers, delivering power efficiency and stability. Ideal for a wide range of applications, this compact and versatile device provides value and benefits to customers looking for a high-quality solution. Upgrade your projects with the NCP1400ASN33T1 and experience the advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the switching regulator.

Surface Mount: YES

Allows for easy and convenient installation on a circuit board.

Maximum Output Current: 0.4 A

Can support a decent amount of load, making it suitable for various applications.

Control Technique: PULSE WIDTH MODULATION

Efficient control technique for regulating the output voltage of the switching regulator.

Switcher Config: BOOST

Boost configuration allows for higher output voltage than the input voltage, which can be useful in certain applications.

Technical Specifications

Switching Regulators & Controllers NCP1400ASN33T1 attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

VOLTAGE-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

5 V

Minimum Input Voltage:

.95 V

Nominal Input Voltage:

5 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.4 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

YES

Switcher Config:

BOOST

Maximum Switching Frequency:

216 kHz

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width (mm):

1.5 mm

Trade Compliance

NCP1400ASN33T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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