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NCP12601AAD1R2G

Onsemi

NCP12601AAD1R2G by Onsemi

NCP12601AAD1R2G by Onsemi is a voltage-mode switching controller with a max operating temperature of 125 °C. It features a boost switcher configuration and operates at a max frequency of 69 kHz. Ideal for automotive applications due to its small outline package style and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,258 parts In-Stock

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Digiode

USA . 2,149 parts In-Stock

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Vigor

Singapore . 303 parts In-Stock

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$0.350

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AZTECH Wire

Italy . 598 parts In-Stock

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Component Stockers USA

USA . 747 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 4,059 parts In-Stock

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TANS Electronics

Latvia . 3,003 parts In-Stock

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SupplyDigital Components

Austria . 2,425 parts In-Stock

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Corphita

USA . 2,066 parts In-Stock

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UHIMA Technologies

Türkiye . 920 parts In-Stock

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Microchip USA

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Kulean Microsystems

USA . 154 parts In-Stock

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Corohmni

South Africa . 152 parts In-Stock

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Overview

Enhance your power management solutions with the NCP12601AAD1R2G by Onsemi! Designed with precision and reliability in mind, this switching regulator offers unparalleled performance in voltage-mode control. Ideal for automotive applications, this small outline package boasts a wide operating temperature range, making it a versatile choice for various environments. Say goodbye to power fluctuations and hello to consistent performance with the NCP12601AAD1R2G. Experience the quality and value that Onsemi brings to the table – upgrade your power management systems today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, ideal for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration into circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage (Vsup): 11 V

The nominal supply voltage of 11 V provides reliable power input for the switching regulator, suitable for a wide range of electronic devices.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures stable performance even in demanding environments.

Control Mode: VOLTAGE-MODE

Voltage-mode control offers precise regulation of output voltage, contributing to the product's efficiency and stability.

Width (mm): 3.9 mm

The compact width of 3.9 mm allows for space-efficient placement within electronic systems, ideal for compact designs.

Control Technique: FREQUENCY MODULATION

Frequency modulation control technique helps optimize the switching regulator's efficiency and performance, ensuring reliable operation.

Switcher Config: BOOST

The boost switcher configuration allows for increased output voltage compared to the input voltage, making it suitable for applications requiring voltage boosting.

Technical Specifications

Switching Regulators & Controllers NCP12601AAD1R2G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

VOLTAGE-MODE

Control Technique:

FREQUENCY MODULATION

JESD-30 Code:

R-PDSO-G9

Length:

4.9 mm

No. of Functions:

1

No. of Terminals:

9

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP9/10,.24,40

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.75 mm

Nominal Supply Voltage (Vsup):

11 V

Surface Mount:

YES

Switcher Config:

BOOST

Maximum Switching Frequency:

69 kHz

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3.9 mm

Trade Compliance

NCP12601AAD1R2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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