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NCP1200AP100G

Onsemi

NCP1200AP100G by Onsemi

NCP1200AP100G by Onsemi is a switching controller with current-mode control technique, 114 kHz max switching frequency, and 0.25 A output current. It is ideal for applications requiring pulse width modulation in power supply designs.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

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Digiode

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ComSIT Distribution GmbH

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AZTECH Wire

Italy . 782 parts In-Stock

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Component Stockers USA

USA . 629 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,636 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

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Microchip USA

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A-Z Elektronik GmbH

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S.R.D Solutions

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TANS Electronics

Latvia . 2,171 parts In-Stock

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Metaverse IC Inc.

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Vigor

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Corphita

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Futuretech Components

Singapore . 700 parts In-Stock

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UHIMA Technologies

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Corohmni

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Overview

Unlock the power of efficient energy management with the NCP1200AP100G by Onsemi. This switching regulator & controller offers unparalleled quality and reliability, ensuring optimal performance in a variety of applications. Manufactured by Onsemi, a trusted leader in the industry, this product delivers value, benefits, and advantages to customers looking for a cost-effective solution. Say goodbye to inefficiency and hello to streamlined operations with the NCP1200AP100G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability, making the product long-lasting.

No. of Terminals: 8

Having 8 terminals allows for versatile connections and configurations, enhancing flexibility in usage.

Control Mode: CURRENT-MODE

Current-mode control provides better stability and accuracy in regulating the output voltage, improving efficiency.

Maximum Output Current: 0.25 A

Being able to handle a maximum output current of 0.25A ensures the product can power various devices effectively.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Switching Regulators & Controllers NCP1200AP100G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

Nominal Input Voltage:

11 V

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.78 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Output Current:

.25 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

4.45 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

NO

Switcher Config:

SINGLE

Maximum Switching Frequency:

114 kHz

Technology:

CMOS

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

NCP1200AP100G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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