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NCP11377BABYDBR2G

Onsemi

NCP11377BABYDBR2G by Onsemi

NCP11377BABYDBR2G by Onsemi is a switching controller with current-mode control technique. It operates b/w -40 to 125 °C and supports input voltage range of 7-28 V. With a max switching frequency of 153 kHz, it is ideal for automotive applications requiring compact design and efficient power management.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 39,000 parts In-Stock

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Vyrian

USA . 9,913 parts In-Stock

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Digiode

USA . 2,091 parts In-Stock

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Vigor

Singapore . 371 parts In-Stock

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$0.580

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371

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AZTECH Wire

Italy . 701 parts In-Stock

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$14.860

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701

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 6,161 parts In-Stock

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TANS Electronics

Latvia . 5,720 parts In-Stock

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Kulean Microsystems

USA . 4,669 parts In-Stock

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Corphita

USA . 2,128 parts In-Stock

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Microchip USA

USA . 1,324 parts In-Stock

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SupplyDigital Components

Austria . 679 parts In-Stock

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UHIMA Technologies

Türkiye . 426 parts In-Stock

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Corohmni

South Africa . 357 parts In-Stock

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Overview

Experience superior quality and reliability with the NCP11377BABYDBR2G by Onsemi, a leading manufacturer in the industry of Switching Regulators & Controllers. This versatile product offers a wide range of applications, making it an essential component for various electronic devices. With its innovative design and advanced features, this switching controller provides exceptional value and performance, ensuring optimal efficiency and functionality. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the NCP11377BABYDBR2G and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and durability, making the product suitable for various operating conditions.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and production costs.

No. of Terminals: 14

Having 14 terminals allows for multiple connections and configurations, enhancing flexibility in application usage.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the product can withstand demanding environmental conditions without overheating.

Control Mode: CURRENT-MODE

Current-mode control provides better stability and accuracy in regulating the output voltage, improving overall performance.

Minimum Operating Temperature: -40 °C

The wide temperature range ensures reliable operation in extreme cold conditions, making it suitable for various applications.

Width (mm): 4.4 mm

The compact width allows for space-saving PCB design, making it suitable for compact electronic devices.

Nominal Input Voltage: 12 V

A nominal input voltage of 12V is common in many applications, making the product compatible with a wide range of power sources.

Maximum Switching Frequency: 153 kHz

High switching frequency allows for efficient power conversion and regulation, reducing power loss and improving efficiency.

Minimum Input Voltage: 7 V

The low minimum input voltage makes the product suitable for applications where input voltage may vary or drop below typical levels.

Technical Specifications

Switching Regulators & Controllers NCP11377BABYDBR2G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

28 V

Minimum Input Voltage:

7 V

Nominal Input Voltage:

12 V

JESD-30 Code:

R-PDSO-G14

Length:

6.5 mm

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.1 mm

Surface Mount:

YES

Maximum Switching Frequency:

153 kHz

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

4.4 mm

Trade Compliance

NCP11377BABYDBR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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