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NCP1030DMR2

Onsemi

NCP1030DMR2 by Onsemi

NCP1030DMR2 by Onsemi is a VOLTAGE-MODE switching regulator with 8 terminals, operating b/w -40 to 125 °C. It has a max output current of 0.68 A and operates at a frequency of up to 1000 kHz. Ideal for automotive applications due to its BCDMOS technology and BOOST switcher configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,176 parts In-Stock

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Digiode

USA . 1,784 parts In-Stock

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AZTECH Wire

Italy . 478 parts In-Stock

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$10.660

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Component Stockers USA

USA . 222 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 27,558 parts In-Stock

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Kulean Microsystems

USA . 7,996 parts In-Stock

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Problanco Electronics

Mexico . 6,021 parts In-Stock

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TANS Electronics

Latvia . 4,651 parts In-Stock

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Corphita

USA . 2,111 parts In-Stock

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UHIMA Technologies

Türkiye . 769 parts In-Stock

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Corohmni

South Africa . 382 parts In-Stock

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SupplyDigital Components

Austria . 308 parts In-Stock

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Microchip USA

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Overview

Experience the unrivaled quality and innovation of Onsemi with the NCP1030DMR2 switching regulator. This cutting-edge product offers a wide range of applications in various industries, providing customers with reliable and efficient power solutions. With its advanced technology and automotive-grade temperature grade, this regulator ensures optimal performance and longevity. Trust Onsemi to deliver superior products that bring value, benefits, and advantages to your projects. Elevate your designs with the NCP1030DMR2 and experience the difference that top-notch manufacturing can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and reliability, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving on PCBs.

Package Shape: SQUARE

Square package shape helps in efficient PCB layout and component placement.

No. of Terminals: 8

Having 8 terminals provides flexibility in connectivity options and functionality.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures stable performance even in harsh environments.

Control Mode: VOLTAGE-MODE

Voltage-mode control offers precise regulation and stability in output voltages.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish ensures good solderability and reliability in connections.

Maximum Switching Frequency: 1000 kHz

High switching frequency enables efficient power conversion and reduced system noise.

Maximum Output Current: 0.68 A

Capable of delivering a maximum output current of 0.68 A, making it suitable for low to medium-power applications.

Technical Specifications

Switching Regulators & Controllers NCP1030DMR2 attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

VOLTAGE-MODE

Control Technique:

PULSE WIDTH MODULATION

Maximum Input Voltage:

16 V

Minimum Input Voltage:

8 V

Nominal Input Voltage:

12 V

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.68 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

YES

Switcher Config:

BOOST

Maximum Switching Frequency:

1000 kHz

Technology:

BCDMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3 mm

Trade Compliance

NCP1030DMR2 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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