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NCP1011ST100T3G

Onsemi

NCP1011ST100T3G by Onsemi

NCP1011ST100T3G by Onsemi is a switching regulator with max output current of 0.55A and max switching frequency of 110kHz. It operates in current-mode control technique, suitable for applications requiring efficient power conversion in compact spaces. The IC is designed for surface mount with small outline package style, making it ideal for space-constrained electronic devices.

Median Price

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Lifecycle Status

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5

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1k+

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Continental Prestige Electronics

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AZTECH Wire

Italy . 153 parts In-Stock

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Overview

Discover the NCP1011ST100T3G by Onsemi, a top-quality switching regulator that offers reliable performance and efficiency. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications in the Switching Regulators & Controllers category. With its compact design and advanced features like current-mode control and pulse width modulation, this regulator delivers exceptional value and benefits to customers. Experience the advantages of the NCP1011ST100T3G and take your projects to the next level with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, ensuring long-lasting performance.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation of the switching regulator, making it suitable for automated assembly processes.

No. of Terminals: 4

Having 4 terminals enables easy connectivity and integration into circuit designs, simplifying the overall setup process.

Control Mode: CURRENT-MODE

The current-mode control mode offers stable and efficient regulation of the switching regulator, providing precise control over the output voltage.

Maximum Output Current: 0.55 A

With a maximum output current of 0.55 A, this switching regulator can efficiently power devices and circuits requiring a moderate amount of current.

Technical Specifications

Switching Regulators & Controllers NCP1011ST100T3G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

Nominal Input Voltage:

8 V

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Length:

6.5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

4

Maximum Output Current:

.55 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOT-223

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Switching Regulator or Controllers

Surface Mount:

YES

Switcher Config:

SINGLE

Maximum Switching Frequency:

110 kHz

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

2.3 mm

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.5 mm

Trade Compliance

NCP1011ST100T3G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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