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NCN6010DTBG

Onsemi

NCN6010DTBG by Onsemi

The Onsemi NCN6010DTBG is a Power Management IC with 14 terminals, operating at -25 to 85 °C. It supports supply voltages of 2.7-3.6V and has a package size of 5x4.4mm for small outline applications in power supply circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,031 parts In-Stock

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Digiode

USA . 1,575 parts In-Stock

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1,575

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AZTECH Wire

Italy . 374 parts In-Stock

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$20.460

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374

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TANS Electronics

Latvia . 7,820 parts In-Stock

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Kulean Microsystems

USA . 6,801 parts In-Stock

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Problanco Electronics

Mexico . 4,574 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Corphita

USA . 917 parts In-Stock

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917

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Corohmni

South Africa . 410 parts In-Stock

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SupplyDigital Components

Austria . 294 parts In-Stock

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Microchip USA

USA . 229 parts In-Stock

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UHIMA Technologies

Türkiye . 49 parts In-Stock

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Overview

Experience unparalleled power management with the NCN6010DTBG by Onsemi. Crafted with precision and reliability, Onsemi's Power Management ICs are designed to optimize performance and efficiency. From small outline to thin profile packaging, this product offers versatility for various applications. Whether you're in need of a stable power supply or support circuit, the NCN6010DTBG delivers exceptional quality and value. Trust Onsemi to provide cutting-edge technology that enhances your electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body ensures durability and reliability for long-term use.

Surface Mount: YES

Being surface mountable makes this product easy to install and suitable for compact electronic designs.

Nominal Supply Voltage (Vsup): 3 V

The 3V supply voltage is commonly used in many electronic devices, making this product compatible with a wide range of applications.

No. of Terminals: 14

Having 14 terminals allows for the connection of multiple components, providing flexibility in circuit design.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures stable performance even in demanding environmental conditions.

Width (mm): 4.4 mm

The compact width of 4.4mm makes this power management IC suitable for space-constrained designs.

Minimum Supply Voltage (Vsup): 2.7 V

The 2.7V minimum supply voltage allows for low-power operation, making it energy-efficient.

Technical Specifications

Power Management ICs NCN6010DTBG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3,3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Analog ICs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

4.4 mm

Trade Compliance

NCN6010DTBG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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