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NC7SV32FHX-L22780

Onsemi

NC7SV32FHX-L22780 by Onsemi

NC7SV32FHX-L22780 by Onsemi is a CMOS Logic Gate with 2 inputs, 18.6 ns propagation delay, and 15 pF load capacitance. Ideal for industrial applications, it operates at temperatures from -40 to 85 °C and supports supply voltages ranging from 0.9V to 3.6V. The small outline package with a very thin profile makes it suitable for space-constrained designs requiring fast signal processing.

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Microchip USA

USA . 6,718 parts In-Stock

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AZTECH Wire

Italy . 728 parts In-Stock

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Component Stockers USA

USA . 470 parts In-Stock

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TANS Electronics

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Problanco Electronics

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QUARKTWIN TECHNOLOGY LTD

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UHIMA Technologies

Türkiye . 991 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Overview

Unlock a world of possibilities with the NC7SV32FHX-L22780 logic gate by Onsemi. Crafted with precision and quality, this versatile component offers fast propagation delay, dual inputs, and a wide temperature range for industrial applications. Its small outline and thin profile make it ideal for space-constrained designs, while its low power consumption ensures efficiency. Elevate your projects with the reliability and performance of Onsemi's logic gates.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the product easy to handle and resistant to damage during installation.

Propagation Delay At Nominal Supply: 18.6 ns

This low propagation delay ensures fast processing and reliable performance, making the product suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards, saving space and reducing assembly time.

No. of Inputs: 2

Having 2 inputs provides flexibility in logic operations and allows for a wider range of functions to be implemented.

Nominal Supply Voltage / Vsup (V): 1.1

Operating at a low nominal supply voltage of 1.1V helps in reducing power consumption and heat generation, making the product energy-efficient.

Load Capacitance (CL): 15 pF

With a low load capacitance, the product can drive capacitive loads effectively without compromising signal integrity.

Power Supplies (V): 1.2/3.3

Support for multiple power supply voltages provides compatibility with various systems and ensures flexibility in design.

Maximum I (ol): 2 Amp

High output current capability of 2A allows the product to drive loads with ease and reliability.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions and maintain performance under stress.

Minimum Operating Temperature: -40 °C

Wide temperature range compatibility (-40 °C to 85°C) ensures reliable operation in both hot and cold environments.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, making the product efficient and reliable.

Technical Specifications

Logic Gates NC7SV32FHX-L22780 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AUP/ULP/V

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Length:

1 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

2 Amp

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.2/3.3

Propagation Delay At Nominal Supply:

18.6 ns

Propagation Delay (tpd):

18.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.9 V

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NC7SV32FHX-L22780 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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