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NC7SU04M5X-L22090

Onsemi

NC7SU04M5X-L22090 by Onsemi

The Onsemi NC7SU04M5X-L22090 is a CMOS Logic Gate with 35ns Propagation Delay, 3V Nominal Voltage, and 50pF Load Capacitance. Ideal for applications requiring fast signal processing in compact spaces due to its small outline package style and dual terminal position.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

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$0.110

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Flip Electronics

USA . 129,000 parts In-Stock

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Vyrian

USA . 2,260 parts In-Stock

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Digiode

USA . 2,086 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 470 parts In-Stock

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$0.108

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470

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Continental Prestige Electronics

USA . 6,759 parts In-Stock

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$0.109

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Argo Parts USA

USA . 849 parts In-Stock

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$0.109

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$0.106

849

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Bastille Electronics

Australia . 500 parts In-Stock

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$0.110

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$0.104

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$0.099

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$0.098

500

$0.110

$0.104

$0.099

$0.098

Microchip USA

USA . 4,536 parts In-Stock

1+ parts

$0.642

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AZTECH Wire

Italy . 594 parts In-Stock

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$9.196

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Ampacity Inc.

Singapore . 994 parts In-Stock

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$33.000

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$33.000

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Aztec Data Supply Inc.

USA . 4,930 parts In-Stock

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$33.193

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Semicontronic

India . 198 parts In-Stock

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$59.000

100+ parts

$57.525

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$57.230

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198

$59.000

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$57.230

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QUARKTWIN TECHNOLOGY LTD

USA . 20,179 parts In-Stock

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TANS Electronics

Latvia . 8,092 parts In-Stock

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SupplyDigital Components

Austria . 4,395 parts In-Stock

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Problanco Electronics

Mexico . 2,546 parts In-Stock

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Corphita

USA . 2,409 parts In-Stock

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Kulean Microsystems

USA . 1,478 parts In-Stock

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UHIMA Technologies

Türkiye . 989 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the NC7SU04M5X-L22090 Logic Gates. Designed for high performance, this product offers fast propagation delay and a wide operating temperature range, making it ideal for a variety of applications. Whether you're looking to optimize your circuit designs or enhance your electronic projects, this logic gate provides unmatched value and benefits. Trust in Onsemi's expertise and elevate your creations with the NC7SU04M5X-L22090.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 35 ns

The low propagation delay ensures fast signal processing, making this product suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and simplifying the assembly process.

Nominal Supply Voltage: 3V

The standard 3V supply voltage ensures compatibility with many electronic systems and devices.

Load Capacitance (CL): 50 pF

The low load capacitance minimizes signal distortion and improves overall performance.

Package Style: SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact size and thin profile make this product suitable for applications where space is limited.

Technology: CMOS

CMOS technology offers low power consumption, making this product energy-efficient and ideal for battery-operated devices.

Maximum Operating Temperature: 85 °C

The high operating temperature range ensures reliable performance in various environmental conditions.

Technical Specifications

Logic Gates NC7SU04M5X-L22090 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

2.6 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Maximum Power Supply Current (ICC):

25 mA

Propagation Delay At Nominal Supply:

35 ns

Propagation Delay (tpd):

125 ns

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.5 mm

Trade Compliance

NC7SU04M5X-L22090 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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