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NC7S86L6X-L22175

Onsemi

NC7S86L6X-L22175 by Onsemi

NC7S86L6X-L22175 by Onsemi is a CMOS Logic Gate with 2 inputs, 125 ns propagation delay, and 50 pF load capacitance. It operates at a supply voltage range of 2-6V and has a max operating temperature of 85 °C. Ideal for industrial applications requiring fast signal processing in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,831 parts In-Stock

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Digiode

USA . 1,836 parts In-Stock

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Microchip USA

USA . 7,532 parts In-Stock

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$0.820

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AZTECH Wire

Italy . 575 parts In-Stock

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$14.080

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QUARKTWIN TECHNOLOGY LTD

USA . 16,145 parts In-Stock

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Kulean Microsystems

USA . 7,358 parts In-Stock

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SupplyDigital Components

Austria . 5,337 parts In-Stock

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TANS Electronics

Latvia . 5,324 parts In-Stock

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Problanco Electronics

Mexico . 5,024 parts In-Stock

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Corphita

USA . 2,142 parts In-Stock

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UHIMA Technologies

Türkiye . 990 parts In-Stock

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Corohmni

South Africa . 170 parts In-Stock

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Overview

Discover the innovative NC7S86L6X-L22175 by Onsemi, a high-quality logic gate that offers exceptional performance and reliability. As a leading manufacturer in the industry, Onsemi ensures top-notch products that meet the highest standards. Ideal for various applications, this logic gate provides seamless integration and efficient operation. With a small outline and very thin profile, it is perfect for space-constrained designs. Experience the benefits of fast propagation delay, low power consumption, and wide temperature range. Trust Onsemi for cutting-edge solutions that deliver value and excellence to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective and lightweight, making the product easy to handle and install.

Propagation Delay At Nominal Supply: 125 ns

The low propagation delay ensures fast signal processing, making this logic gate suitable for time-sensitive applications.

Surface Mount: YES

Being surface mountable allows for easy PCB assembly and saves space on the board.

Nominal Supply Voltage / Vsup (V): 3

Operates at a common voltage level of 3V, compatible with many electronic systems.

Load Capacitance (CL): 50 pF

Optimized for handling a typical load capacitance, ensuring stable and reliable operation.

Maximum Operating Temperature: 85 °C

Capable of withstanding high temperatures, making it suitable for industrial environments.

Minimum Operating Temperature: -40 °C

Operates efficiently even in low-temperature conditions, adding to its versatility.

Technology: CMOS

Utilizes CMOS technology, offering low power consumption and high noise immunity for improved performance.

Technical Specifications

Logic Gates NC7S86L6X-L22175 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

1.3 Amp

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

125 ns

Propagation Delay (tpd):

125 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NC7S86L6X-L22175 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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