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NC7S04L6X-L22175

Onsemi

NC7S04L6X-L22175 by Onsemi

The Onsemi NC7S04L6X-L22175 logic gate has a propagation delay of 35ns at 3V, suitable for applications requiring fast signal processing. With a load capacitance of 50pF and max I (ol) of 2.6A, it is ideal for compact electronic devices. This surface-mount package with dual terminals operates b/w -40 to 85°C, making it versatile for various temperature conditions.

Median Price

$0.125

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 550 parts In-Stock

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$0.125

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Vyrian

USA . 2,204 parts In-Stock

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Digiode

USA . 632 parts In-Stock

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Corohmni

South Africa . 263 parts In-Stock

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$0.120

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Aranea Global

USA . 1,000 parts In-Stock

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$0.118

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Microchip USA

USA . 6,799 parts In-Stock

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$0.697

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$0.697

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AZTECH Wire

Italy . 846 parts In-Stock

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$17.612

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Ampacity Inc.

Singapore . 1,457 parts In-Stock

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$65.000

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TANS Electronics

Latvia . 6,487 parts In-Stock

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Problanco Electronics

Mexico . 6,026 parts In-Stock

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Kulean Microsystems

USA . 5,041 parts In-Stock

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SupplyDigital Components

Austria . 1,832 parts In-Stock

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UHIMA Technologies

Türkiye . 989 parts In-Stock

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Corphita

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Overview

Elevate your circuit designs with the NC7S04L6X-L22175 by Onsemi - a top-quality logic gate that promises reliable performance and efficient operation. Manufactured by Onsemi, a trusted leader in semiconductor solutions, this component offers fast propagation delay, low power consumption, and a compact surface-mount package for easy integration. Ideal for a wide range of applications, this logic gate is perfect for enhancing the functionality of your electronic projects. Discover the value and benefits of using the NC7S04L6X-L22175 and take your designs to the next level today!

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 35 ns

Low propagation delay ensures fast response time for logic operations.

Surface Mount: YES

Allows for easy and convenient placement on circuit boards.

Package Shape: RECTANGULAR

Standard package shape for easy integration into existing designs.

Nominal Supply Voltage / Vsup (V): 3

Common supply voltage for compatibility with many systems.

Load Capacitance (CL): 50 pF

Suitable for driving moderate loads in typical applications.

No. of Terminals: 6

Provides multiple connection points for versatile usage.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Maximum Power Supply Current (ICC): 25 mA

Operates within a reasonable power supply current range for efficiency.

Technical Specifications

Logic Gates NC7S04L6X-L22175 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC

JESD-30 Code:

R-XDSO-N6

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

2.6 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Maximum Power Supply Current (ICC):

25 mA

Propagation Delay At Nominal Supply:

35 ns

Propagation Delay (tpd):

125 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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