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NBXDPA019LNHTAG

Onsemi

NBXDPA019LNHTAG by Onsemi

NBXDPA019LNHTAG by Onsemi is a ceramic XO Clock Oscillator with LVDS type, operating at 125MHz frequency. It has a supply voltage range of 2.97V to 3.63V and operates in temperatures from -40 °C to 85°C. Ideal for applications requiring precise timing in electronic circuits.

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3

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1k+

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Vyrian

USA . 2,668 parts In-Stock

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Digiode

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Pegasus Components GmbH

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AZTECH Wire

Italy . 245 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,535 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 7,090 parts In-Stock

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SupplyDigital Components

Austria . 6,150 parts In-Stock

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Kulean Microsystems

USA . 4,759 parts In-Stock

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Problanco Electronics

Mexico . 1,069 parts In-Stock

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Corphita

USA . 766 parts In-Stock

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UHIMA Technologies

Türkiye . 700 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 221 parts In-Stock

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Perfect Parts

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Overview

Upgrade your clock oscillator game with the NBXDPA019LNHTAG by Onsemi. Manufactured with top-quality materials and precision engineering, this XO clock oscillator offers unparalleled frequency stability and reliable performance. Ideal for a wide range of applications, this product provides customers with the value and benefits they need for their projects. Say goodbye to downtime and hello to seamless operations with the NBXDPA019LNHTAG.

Feature Benefit Bullets

Package Body Material: CERAMIC

The use of ceramic material provides good stability and reliability to the oscillator, making it suitable for various applications.

Frequency Stability: 50 %

With a high frequency stability of 50%, this clock oscillator ensures accurate and consistent performance in timing applications.

Maximum Supply Voltage: 3.63 V

The higher maximum supply voltage allows for a wider range of power supply options, increasing flexibility in system design.

Output Load: 100 OHM

The low output load of 100 OHM helps minimize power consumption and ensure efficient operation of the oscillator.

Maximum Supply Current: 105 mA

With a maximum supply current of 105 mA, this oscillator operates efficiently while consuming minimal power.

Nominal Supply Voltage: 3.3 V

The nominal supply voltage of 3.3 V ensures compatibility with standard power supply specifications, making it easy to integrate into existing systems.

Oscillator Type: LVDS

The LVDS oscillator type provides low noise and high-speed signal transmission, making it ideal for applications requiring precise timing.

No. of Terminals: 6

The 6 terminals offer easy connectivity and integration with other components, simplifying the overall system design.

Maximum Rise Time: 0.4 ms

The fast rise time of 0.4 ms ensures quick signal response and reliable operation in time-sensitive applications.

Physical Dimension: 7.0mm x 5.0mm x 1.9mm

The compact size of 7.0mm x 5.0mm x 1.9mm allows for easy placement on PCBs with limited space, enabling efficient use of board real estate.

Minimum Supply Voltage: 2.97 V

The low minimum supply voltage of 2.97 V ensures operation even in low-power scenarios, enhancing the oscillator's versatility.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable performance even in extreme environmental conditions, increasing the oscillator's durability.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this oscillator can function in cold environments without compromising performance.

Nominal Operating Frequency: 125 MHz

The nominal operating frequency of 125 MHz provides high precision and accuracy, making this oscillator suitable for a wide range of timing applications.

Maximum Fall Time: 0.4 ns

The fast fall time of 0.4 ns ensures quick signal transition and reliable operation in high-speed applications.

Maximum Symmetry (%): 52/48

The balanced symmetry of 52/48 ensures equal duty cycles, providing reliable and accurate timing signals for various applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation on PCBs, saving space and simplifying the manufacturing process.

Technical Specifications

XO Clock Oscillators NBXDPA019LNHTAG attributes and parameters. Explore more XO Clock Oscillators devices from Onsemi

Specs

Additional Features:

VOLTAGE 2.5 AND FREQ 250 MHZ ALSO POSSIBLE; TRI-STATE; E/D FUNCTION; DIFFERENTIAL O/P; TAPE AND REEL

Maximum Fall Time:

.4 ns

Frequency Adjustment (Mechanical):

NO

Frequency Stability:

Mounting Feature:

No. of Terminals:

6

Nominal Operating Frequency:

125 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Oscillator Type:

Output Load:

100 OHM

Package Body Material:

CERAMIC

Physical Dimension:

7.0mm x 5.0mm x 1.9mm

Maximum Rise Time:

.4 ms

Maximum Supply Current:

105 mA

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

2.97 V

Nominal Supply Voltage:

3.3 V

Maximum Symmetry (%):

52/48

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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