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NBXDPA012LN1TAG

Onsemi

NBXDPA012LN1TAG by Onsemi

NBXDPA012LN1TAG by Onsemi is a LVDS XO Clock Oscillator with 106.25 MHz frequency, 50% stability, and 3.63 V max supply voltage. Ideal for applications requiring precise timing in temperature-sensitive environments due to its -40 to 85 °C operating range.

Median Price

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2

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Vyrian

USA . 6,845 parts In-Stock

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Digiode

USA . 830 parts In-Stock

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AZTECH Wire

Italy . 146 parts In-Stock

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$12.950

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TANS Electronics

Latvia . 7,582 parts In-Stock

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SupplyDigital Components

Austria . 3,320 parts In-Stock

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Kulean Microsystems

USA . 2,873 parts In-Stock

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Perfect Parts

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Corphita

USA . 540 parts In-Stock

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UHIMA Technologies

Türkiye . 484 parts In-Stock

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Corohmni

South Africa . 332 parts In-Stock

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Microchip USA

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Problanco Electronics

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Overview

Immerse yourself in a world of precision and reliability with the NBXDPA012LN1TAG by Onsemi. Crafted with expertise and excellence, this XO Clock Oscillator boasts unparalleled quality and performance. From ensuring optimal frequency stability to delivering seamless operation, this product is designed to exceed expectations. Ideal for various applications, this oscillator offers unmatched value and benefits to customers seeking top-notch solutions. Elevate your projects with the NBXDPA012LN1TAG and experience the difference that Onsemi brings to the table.

Feature Benefit Bullets

Frequency Stability: 50%

This clock oscillator offers a high frequency stability, ensuring accurate and reliable timing in various applications.

Maximum Supply Voltage: 3.63 V

The high maximum supply voltage allows for flexibility in different power supply configurations.

Output Load: 100 OHM

The low output load of 100 OHM makes it suitable for driving various circuits without excessive power consumption.

Nominal Supply Voltage: 3.3 V

The nominal supply voltage of 3.3 V is commonly used in many electronic systems, making integration easier.

Oscillator Type: LVDS

The Low Voltage Differential Signaling (LVDS) design provides high noise immunity and reliable signal transmission.

No. of Terminals: 6

With 6 terminals, this clock oscillator is easy to install and interface with other components.

Maximum Rise Time: 0.4 ms

The fast rise time ensures quick signal transitions, ideal for high-speed applications that require precise timing.

Physical Dimension: 7.0mm x 5.0mm x 1.9mm

The compact size of this oscillator makes it easy to incorporate into space-constrained designs.

Minimum Supply Voltage: 2.97 V

With a low minimum supply voltage, this oscillator can operate in systems with limited power availability.

Maximum Operating Temperature: 85 °C

The high operating temperature range allows this oscillator to function reliably in a variety of environmental conditions.

Minimum Operating Temperature: -40 °C

The wide operating temperature range ensures consistent performance even in extreme cold conditions.

Nominal Operating Frequency: 106.25 MHz

The high operating frequency makes this oscillator suitable for applications that require precise timing at relatively high speeds.

Maximum Fall Time: 0.4 ns

The fast fall time complements the quick rise time, ensuring sharp signal transitions and accurate timing.

Maximum Symmetry (%): 52/48

The high symmetry percentage ensures balanced signal outputs, enhancing the overall stability and performance of the oscillator.

Mounting Feature: SURFACE MOUNT

The surface mount installation feature simplifies the assembly process and allows for easy integration into circuit boards.

Technical Specifications

XO Clock Oscillators NBXDPA012LN1TAG attributes and parameters. Explore more XO Clock Oscillators devices from Onsemi

Specs

Additional Features:

VOLTAGE 2.5 AND FREQ 212.5 MHZ POSSIBLE; TRI-STATE; E/D FUNCTION; DIFFERENTIAL O/P; TAPE AND REEL

Maximum Fall Time:

.4 ns

Frequency Adjustment (Mechanical):

NO

Frequency Stability:

Mounting Feature:

No. of Terminals:

6

Nominal Operating Frequency:

106.25 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Oscillator Type:

Output Load:

100 OHM

Physical Dimension:

7.0mm x 5.0mm x 1.9mm

Maximum Rise Time:

.4 ms

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

2.97 V

Nominal Supply Voltage:

3.3 V

Maximum Symmetry (%):

52/48

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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