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NB3V63143GXXMNR2G

Onsemi

NB3V63143GXXMNR2G by Onsemi

NB3V63143GXXMNR2G by Onsemi is a clock generator with a max output frequency of 200 MHz. It operates in industrial temperature range (-40 to 85 °C) and has a supply voltage range of 1.7V to 1.9V. This chip carrier package with very thin profile is suitable for various applications requiring precise clock generation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,424 parts In-Stock

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Vyrian

USA . 177 parts In-Stock

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TANS Electronics

Latvia . 6,430 parts In-Stock

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SupplyDigital Components

Austria . 3,601 parts In-Stock

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Kulean Microsystems

USA . 2,485 parts In-Stock

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UHIMA Technologies

Türkiye . 874 parts In-Stock

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Corphita

USA . 197 parts In-Stock

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Corohmni

South Africa . 138 parts In-Stock

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Problanco Electronics

Mexico . 92 parts In-Stock

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Overview

Discover the NB3V63143GXXMNR2G by Onsemi, a top-quality clock generator designed to meet your needs! Manufactured by Onsemi, a trusted name in the industry, this product offers a wide range of applications and benefits. From its durable plastic/epoxy body to its compact square shape, this clock generator is perfect for industrial use. With a maximum output clock frequency of 200 MHz and a nominal supply voltage of 1.8 V, this chip carrier is sure to deliver reliable performance. Upgrade your system with the NB3V63143GXXMNR2G and experience the quality and value Onsemi has to offer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material, ideal for portable electronic devices.

Surface Mount: YES

Easy to solder onto circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 1.9 V

Allows for flexibility in power supply options without risking damage to the product.

Package Shape: SQUARE

Space-efficient design that can fit well within a compact electronic device.

Maximum Output Clock Frequency: 200 MHz

High-frequency output for demanding applications that require precise timing.

No. of Terminals: 16

Provides ample connectivity options for interfacing with other components in a circuit.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Variety of package styles available to suit different mounting and heat dissipation needs.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage for energy-efficient operation.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, suitable for industrial environments.

Minimum Operating Temperature: -40 °C

Wide temperature range for reliable performance in harsh conditions.

Terminal Position: QUAD

Quad terminal configuration for secure and reliable connections.

Maximum Seated Height: 1 mm

Low-profile design for compact and slim electronic devices.

Width: 3 mm

Narrow width for space-saving integration on a circuit board.

Length: 3 mm

Compact size for efficient use of board space.

Temperature Grade: INDUSTRIAL

Designed to operate reliably in industrial temperature environments.

Peripheral IC Type: CLOCK GENERATOR, OTHER

Versatile clock generator IC suitable for a variety of applications.

Technology: CMOS

Low power consumption and high noise immunity for reliable clock generation.

Terminal Form: NO LEAD

Lead-free terminals for compliance with environmental regulations.

Nominal Supply Voltage: 1.8 V

Standard supply voltage for compatibility with most electronic systems.

Terminal Pitch: 0.5 mm

Fine pitch terminals for high-density mounting on a circuit board.

Nominal Primary Clock/Crystal Frequency: 50 MHz

Common clock frequency ideal for various applications requiring synchronized timing.

Technical Specifications

Clock Generators NB3V63143GXXMNR2G attributes and parameters. Explore more Clock Generators devices from Onsemi

Specs

JESD-30 Code:

S-PQCC-N16

Length:

3 mm

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Clock Frequency:

200 MHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.12SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Nominal Primary Clock/Crystal Frequency:

50 MHz

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3 mm

Peripheral IC Type:

Trade Compliance

NB3V63143GXXMNR2G Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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