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MURS240T3

Onsemi

MURS240T3 by Onsemi

MURS240T3 by Onsemi is a single diode with ultra-fast recovery time of 0.065 us, suitable for applications requiring high-speed performance. With a max forward voltage of 1.05 V and output current of 2 A, it operates in temperatures ranging from -65 to 175 °C. Ideal for rectification tasks in electronic circuits due to its silicon diode element material and peak reverse voltage of 400 V.

Median Price

$0.125

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

1

-

$0.132

$0.110

$0.098

Farnell

UK . 1 parts In-Stock

1+ parts

-

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-

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$0.118

1

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-

$0.118

Distributors (In-Stock)

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Digiode

USA . 1,987 parts In-Stock

1+ parts

$0.095

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1,987

$0.095

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Chip Stock

USA . 15,500 parts In-Stock

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15,500

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Vyrian

USA . 7,509 parts In-Stock

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7,509

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Prism Electronics

USA . 1,243 parts In-Stock

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1,243

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Distributors (Availability)

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Corphita

USA . 2,277 parts In-Stock

1+ parts

$0.090

100+ parts

-

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2,277

$0.090

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-

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Corohmni

South Africa . 357 parts In-Stock

1+ parts

$0.108

100+ parts

-

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357

$0.108

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AZTECH Wire

Italy . 552 parts In-Stock

1+ parts

$13.360

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552

$13.360

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Kulean Microsystems

USA . 6,605 parts In-Stock

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TANS Electronics

Latvia . 4,898 parts In-Stock

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4,898

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Problanco Electronics

Mexico . 3,283 parts In-Stock

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Perfect Parts

USA . 1,392 parts In-Stock

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1,392

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UHIMA Technologies

Türkiye . 184 parts In-Stock

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SupplyDigital Components

Austria . 6 parts In-Stock

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6

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Continental Prestige Electronics

USA . 1 parts In-Stock

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$0.130

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1

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$0.130

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Overview

Discover the superior quality and reliability of the MURS240T3 diode by Onsemi, a trusted manufacturer in the industry. This ultra-fast recovery diode is ideal for a wide range of applications, offering customers unmatched value and performance. With its high output current, low forward voltage, and fast reverse recovery time, this diode provides efficient and reliable operation in various electronic devices. Trust Onsemi's expertise and choose the MURS240T3 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance in various environments.

Config: SINGLE

Simplifies circuit design and installation by having only one diode in the package.

Surface Mount: YES

Facilitates easy PCB assembly and saves space compared to through-hole diodes.

Maximum Reverse Recovery Time: 0.065 us

Offers fast switching capabilities, suitable for applications requiring high speed and efficiency.

Package Shape: RECTANGULAR

Allows for easy mounting and orientation on the PCB, optimizing space utilization.

No. of Terminals: 2

Simplifies connection and integration into circuits, reducing wiring complexity.

Application: ULTRA FAST RECOVERY

Ideal for applications that require rapid diode recovery times and efficient energy conversion.

Maximum Operating Temperature: 175 °C

Ensures stable performance in high-temperature environments, expanding the range of potential applications.

Minimum Operating Temperature: -65 °C

Provides versatility for operation in extreme cold conditions without compromising performance.

Terminal Finish: Tin/Lead (Sn/Pb)

Enables reliable soldering connections and enhances the diode's longevity in electronic circuits.

Maximum Forward Voltage (VF): 1.05 V

Ensures low power loss and high efficiency in forward conduction, reducing energy waste.

Maximum Output Current: 2 A

Supports moderate to high current applications, making it a versatile choice for various circuit designs.

Maximum Repetitive Peak Reverse Voltage: 400 V

Handles high reverse voltages, safeguarding the circuit against voltage spikes and transients.

Diode Element Material: SILICON

Provides reliable and consistent diode characteristics, ensuring stable performance over time.

Technical Specifications

Diodes & Rectifiers MURS240T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.065 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURS240T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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