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MURP20040CT

Onsemi

MURP20040CT by Onsemi

MURP20040CT by Onsemi is a Schottky rectifier diode with 2 elements in common cathode configuration. It has a max forward voltage of 1.8V and output current of 100A, suitable for ultra-fast recovery power applications at up to 175°C operating temperature. The diode features a peak reverse voltage of 400V and fast reverse recovery time of 0.075us, making it ideal for high-power electronic systems.

Median Price

$23.330

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 25 parts In-Stock

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$23.330

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$13.750

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25

$23.330

$13.750

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Vyrian

USA . 899 parts In-Stock

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$21.500

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899

$21.500

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Digiode

USA . 1,200 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Nova Conductors

Japan . 50 parts In-Stock

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ECAB

Sweden . 3 parts In-Stock

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Ampacity Inc.

Singapore . 526 parts In-Stock

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$3.010

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QUARKTWIN TECHNOLOGY LTD

USA . 22,843 parts In-Stock

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SupplyDigital Components

Austria . 5,533 parts In-Stock

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Continental Prestige Electronics

USA . 4,298 parts In-Stock

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Kulean Microsystems

USA . 4,129 parts In-Stock

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Argo Parts USA

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TANS Electronics

Latvia . 1,226 parts In-Stock

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Corphita

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Aranea Global

USA . 1,000 parts In-Stock

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Problanco Electronics

Mexico . 862 parts In-Stock

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UHIMA Technologies

Türkiye . 404 parts In-Stock

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Metaverse IC Inc.

Canada . 300 parts In-Stock

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Corohmni

South Africa . 289 parts In-Stock

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Perfect Parts

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Overview

Discover the high-quality MURP20040CT diode by Onsemi, a leader in the industry known for its reliable products. This diode offers ultra-fast recovery power and a maximum output current of 100A, making it perfect for a wide range of applications. With its common cathode configuration and Schottky technology, this diode provides exceptional performance and efficiency. Experience the value and benefits of this product, from its superior design to its maximum operating temperature of 175°C. Trust Onsemi to deliver cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diode, making it suitable for a wide range of applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient and convenient circuit connections.

Maximum Reverse Recovery Time: 0.075 us

Ultra fast reverse recovery time ensures minimal power loss and efficient operation of the diode.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and integrate into various electronic devices and systems.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in demanding environments.

Diode Type: RECTIFIER DIODE

Rectifier diode is specifically designed for converting alternating current (AC) to direct current (DC), making it ideal for power applications.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speeds, improving overall efficiency and performance.

Maximum Repetitive Peak Reverse Voltage: 400 V

High peak reverse voltage rating provides protection against overvoltage conditions, ensuring the diode can handle varying electrical loads.

Technical Specifications

Diodes & Rectifiers MURP20040CT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-30 Code:

R-PUFM-X2

Maximum Non Repetitive Peak Forward Current:

800 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

100 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

MURP20040CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-507-2289, 5961015072289

NIIN

015072289

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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