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MURP20020CT

Onsemi

MURP20020CT by Onsemi

MURP20020CT by Onsemi is a Schottky rectifier diode with 2 elements, offering ultra-fast recovery power. It has a max forward voltage of 1.1V and can handle up to 100A output current. Ideal for applications requiring high-speed switching and efficiency in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

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Vyrian

USA . 245 parts In-Stock

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Digiode

USA . 110 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 20,632 parts In-Stock

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TANS Electronics

Latvia . 7,466 parts In-Stock

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SupplyDigital Components

Austria . 6,263 parts In-Stock

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Kulean Microsystems

USA . 2,389 parts In-Stock

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Problanco Electronics

Mexico . 1,500 parts In-Stock

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Corphita

USA . 982 parts In-Stock

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Metaverse IC Inc.

Canada . 285 parts In-Stock

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UHIMA Technologies

Türkiye . 245 parts In-Stock

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Corohmni

South Africa . 205 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the MURP20020CT by Onsemi. As a leading manufacturer in the industry of diodes & rectifiers, Onsemi delivers exceptional quality and precision engineering in every product. The MURP20020CT offers ultra-fast recovery power with a common cathode configuration, making it ideal for a wide range of applications. From its efficient design to its high output current capacity, this rectifier diode is a game-changer in the field. Trust Onsemi to provide you with the best-in-class technology and value that your projects deserve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diodes, making them suitable for various applications.

Maximum Reverse Recovery Time: 0.05 us

The ultra-fast maximum reverse recovery time ensures efficient and fast operation of the diodes in power applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement of the diodes in electronic circuits or systems.

No. of Terminals: 2

Having only 2 terminals simplifies the installation process and reduces the chances of errors during connection.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature tolerance makes these diodes reliable in various environmental conditions.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is designed for converting AC to DC current efficiently.

Maximum Output Current: 100 A

With a high maximum output current rating, these diodes can handle heavy loads and power requirements.

Technology: SCHOTTKY

Schottky technology ensures low forward voltage drop and fast switching characteristics, making these diodes suitable for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 300 V

The high maximum repetitive peak reverse voltage rating allows these diodes to handle moderate to high voltage requirements with reliability.

Technical Specifications

Diodes & Rectifiers MURP20020CT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PUFM-X2

Maximum Non Repetitive Peak Forward Current:

800 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

100 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

MURP20020CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-379-2871, 5961013792871

NIIN

013792871

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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