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MUR210G

Onsemi

MUR210G by Onsemi

The Onsemi MUR210G is a single rectifier diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.03 us and a max forward voltage of 0.74 V. It operates in temperatures ranging from -65 to 175 °C and is ideal for applications requiring high-speed switching capabilities.

Median Price

$0.099

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$0.065

100+ parts

$0.059

1k+ parts

$0.053

10k+ parts

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5,000

$0.065

$0.059

$0.053

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Flip Electronics (Authorized)

USA . 10,000 parts In-Stock

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Rochester

USA . 991 parts In-Stock

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$0.133

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$0.111

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$0.099

991

-

$0.133

$0.111

$0.099

Distributors (In-Stock)

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Digiode

USA . 774 parts In-Stock

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$0.062

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774

$0.062

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Vyrian

USA . 832 parts In-Stock

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$0.065

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832

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Chip Stock

USA . 73,000 parts In-Stock

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Flip Electronics

USA . 10,000 parts In-Stock

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Zilex Electronics Inc.

Canada . 3,000 parts In-Stock

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R&J Components

USA . 2,085 parts In-Stock

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2,085

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Distributors (Availability)

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Corphita

USA . 1,273 parts In-Stock

1+ parts

$0.058

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1,273

$0.058

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$0.065

100+ parts

$0.059

1k+ parts

$0.053

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-

5,000

$0.065

$0.059

$0.053

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Corohmni

South Africa . 287 parts In-Stock

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$0.065

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287

$0.065

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Continental Prestige Electronics

USA . 18 parts In-Stock

1+ parts

$0.472

100+ parts

$0.233

1k+ parts

$0.112

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18

$0.472

$0.233

$0.112

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QUARKTWIN TECHNOLOGY LTD

USA . 29,964 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 7,397 parts In-Stock

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SupplyDigital Components

Austria . 5,725 parts In-Stock

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TANS Electronics

Latvia . 4,232 parts In-Stock

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Kulean Microsystems

USA . 4,137 parts In-Stock

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Perfect Parts

USA . 3,410 parts In-Stock

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UHIMA Technologies

Türkiye . 897 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

With the MUR210G diode by Onsemi, quality meets performance in one compact package. Manufactured by a trusted industry leader, this product offers ultra-fast recovery power for a wide range of applications. From its high operating temperature capability to its low forward voltage and high output current capacity, the MUR210G delivers exceptional value and reliability to customers seeking top-notch rectifier diodes. Trust Onsemi's expertise and choose the MUR210G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body provides durability and protection for the diode, ensuring it can withstand different environmental conditions.

Maximum Reverse Recovery Time: 0.03 us

The ultra-fast reverse recovery time allows for efficient and quick switching, making this diode ideal for applications requiring rapid response times.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery power applications, this diode is suitable for high-speed and high-power electronics where quick response times are critical.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175°C ensures the diode can function reliably in various challenging environments without overheating.

Maximum Output Current: 2 A

With a maximum output current of 2 A, this diode is capable of handling moderate levels of electrical current, making it suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers MUR210G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.74 V

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MUR210G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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