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MRA4005T1

Onsemi

MRA4005T1 by Onsemi

MRA4005T1 by Onsemi is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 600V. It is designed for applications requiring high efficiency power conversion in small outline packages, suitable for surface mount assembly. Operating at up to 150°C, it offers a forward voltage of 1.04V and can handle non-repetitive peak forward currents up to 30A.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 5,972 parts In-Stock

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Digiode

USA . 789 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Ampacity Inc.

Singapore . 617 parts In-Stock

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$1.010

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617

$1.010

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AZTECH Wire

Italy . 330 parts In-Stock

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$16.993

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330

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Kepictronics

USA . 11,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,083 parts In-Stock

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Problanco Electronics

Mexico . 4,592 parts In-Stock

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TANS Electronics

Latvia . 3,721 parts In-Stock

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Kulean Microsystems

USA . 3,420 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 2,025 parts In-Stock

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UHIMA Technologies

Türkiye . 673 parts In-Stock

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Corphita

USA . 549 parts In-Stock

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Corohmni

South Africa . 301 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Enhance your electronic projects with the MRA4005T1 diode by Onsemi, a top-quality manufacturer known for its reliable components. Ideal for a wide range of applications, this rectifier diode offers superior performance and efficiency. With a maximum output current of 1 A and a maximum repetitive peak reverse voltage of 600 V, this diode ensures optimal functionality and durability. Experience the value and benefits of Onsemi's MRA4005T1 in your next project today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the diode, ensuring a longer lifespan.

Config: SINGLE

Single configuration makes it easy to integrate into circuit design and simplifies installation.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB design, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular shape is common and easy to handle, making it suitable for various applications.

No. of Terminals: 2

Having only 2 terminals simplifies wiring and reduces the chance of wiring errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for efficient use of board real estate.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in demanding environments.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead finish provides good conductivity and solderability for easy installation.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and allows for better heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature minimizes the risk of damage to the diode during assembly.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures proper soldering and reliable solder joints.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC current, making it versatile for many applications.

Maximum Forward Voltage (VF): 1.04 V

Low forward voltage drop ensures minimal power loss and efficient operation.

Maximum Output Current: 1 A

High maximum output current capability allows for handling higher loads and power requirements.

Terminal Form: C BEND

C bend terminal form provides secure connections and reduces the risk of disconnection.

Maximum Repetitive Peak Reverse Voltage: 600 V

High maximum reverse voltage rating offers protection against voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 30 A

High non-repetitive peak forward current capability ensures the diode can handle sudden current surges.

Diode Element Material: SILICON

Silicon is a common and reliable material for diodes, providing consistent performance and durability.

Technical Specifications

Diodes & Rectifiers MRA4005T1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.04 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MRA4005T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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