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MRA4003T3

Onsemi

MRA4003T3 by Onsemi

MRA4003T3 by Onsemi is a single rectifier diode with a max output current of 1A and max repetitive peak reverse voltage of 300V. It comes in a small outline package shape suitable for surface mount applications. This diode is ideal for use in electronics requiring high forward voltage and low reverse leakage currents.

Median Price

$0.160

Lifecycle Status

Suppliers In-Stock

39

In-Stock Inventory

1k+

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TEDSS.com

USA . 15,170 parts In-Stock

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DF Sales Co.

USA . 2,300 parts In-Stock

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Forefront Electronics and Design

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PC Components Company LLC

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Corohmni

South Africa . 493 parts In-Stock

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Aztec Data Supply Inc.

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Semicontronic

India . 1,373 parts In-Stock

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AZTECH Wire

Italy . 730 parts In-Stock

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Component Stockers USA

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Metaverse IC Inc.

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Problanco Electronics

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Continental Prestige Electronics

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Overview

Enhance your electronic projects with the high-quality MRA4003T3 rectifier diode from Onsemi. Known for their reliable manufacturing processes, Onsemi delivers top-notch diodes and rectifiers that are perfect for a wide range of applications. Whether you're working on power supplies, battery chargers, or LED lighting, this small outline package with dual terminals offers superior performance and efficiency. Trust Onsemi to provide you with a product that exceeds expectations and adds value to your designs. Choose the MRA4003T3 for your next project and experience the benefits of using top-of-the-line components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Single configuration simplifies design and installation, making it easier to integrate into circuits.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on circuit boards.

Package Shape: RECTANGULAR

Rectangular shape facilitates space-saving design and efficient placement on PCBs.

No. of Terminals: 2

Having only 2 terminals simplifies connections, reducing the risk of errors during installation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for more compact circuit layouts.

Maximum Operating Temperature: 175 °C

High operating temperature range ensures reliable performance in various environmental conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish provides good electrical conductivity and solderability for secure connections.

Terminal Position: DUAL

Dual terminal position enables flexibility in circuit design and easy connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature prevents overheating and ensures component reliability.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for secure and stable soldering during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC and ensures efficient power management in circuits.

Maximum Forward Voltage (VF): 1.18 V

Low forward voltage reduces power loss and improves energy efficiency in electronic devices.

Maximum Output Current: 1 A

High output current capability supports various applications requiring reliable power delivery.

Terminal Form: C BEND

C bend terminal form provides secure mechanical connection and ease of soldering during assembly.

Maximum Repetitive Peak Reverse Voltage: 300 V

High reverse voltage rating ensures protection against voltage spikes and fluctuations in the circuit.

Maximum Non Repetitive Peak Forward Current: 30 A

High non-repetitive peak forward current capability ensures reliable operation during transient overloads.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency, low leakage current, and stable performance in various operating conditions.

Technical Specifications

Diodes & Rectifiers MRA4003T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.18 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MRA4003T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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