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MOC3072VM

Onsemi

MOC3072VM by Onsemi

The Onsemi MOC3072VM is a single TRIAC output optocoupler with a max on-state voltage of 2.5V and peak surge current of 1A. It operates b/w -40 to 85 °C, has an isolation voltage of 4170V, and is ideal for triggering devices in applications requiring high voltage protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,129 parts In-Stock

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Digiode

USA . 1,537 parts In-Stock

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SupplyDigital Components

Austria . 8,062 parts In-Stock

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TANS Electronics

Latvia . 8,026 parts In-Stock

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Problanco Electronics

Mexico . 7,808 parts In-Stock

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Kulean Microsystems

USA . 5,734 parts In-Stock

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Corphita

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Corohmni

South Africa . 110 parts In-Stock

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UHIMA Technologies

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Overview

Discover the power and precision of the MOC3072VM by Onsemi, a top-tier manufacturer known for producing high-quality optocoupler trigger devices. With a peak surge current of 1A and a maximum forward current of 0.06A, this TRIAC output optocoupler offers reliable performance in a variety of applications. From industrial automation to consumer electronics, this versatile device ensures seamless operation with its single configuration and maximum isolation voltage of 4170V. Trust in Onsemi's reputation for excellence and elevate your projects with the MOC3072VM. Unlock new possibilities and embrace superior connectivity with this cutting-edge component.

Feature Benefit Bullets

Maximum On State Voltage: 2.5 V

Low on-state voltage helps in reducing power consumption and increasing efficiency of the device.

Configuration: SINGLE

Single configuration simplifies the wiring and setup process of the device.

Peak Surge Current: 1 A

High peak surge current capability ensures the device can handle sudden spikes in current without damage.

Maximum Forward Current: 0.06 A

The low maximum forward current ensures that the device operates within safe electrical limits.

Optoelectronic Type: TRIAC OUTPUT OPTOCOUPLER

Triac output optocoupler design allows for bidirectional current flow and efficient switching capabilities.

Maximum Operating Temperature: 85 °C

Wide operating temperature range makes this device suitable for various environmental conditions.

Minimum Operating Temperature: -40 °C

Ability to operate in low temperatures makes this device ideal for applications in cold environments.

Maximum Input Trigger Current: 0.01 A

Low trigger current requirement ensures efficient operation and compatibility with a range of input sources.

Repetitive Off-state Voltage (Peak): 800 V

High off-state voltage capability provides insulation and protection for the device during off-state conditions.

Packing Method: TUBE

Tube packaging protects the device during transportation and storage, ensuring its integrity.

Maximum Reverse Leakage Current: 0.0001 A

Low reverse leakage current minimizes power losses and enhances the overall efficiency of the device.

Maximum Isolation Voltage: 4170 V

High isolation voltage rating ensures safe operation and protection against electrical hazards.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable installation of the device in various applications.

Technical Specifications

Optocoupler Trigger Device Outputs MOC3072VM attributes and parameters. Explore more Optocoupler Trigger Device Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED

Configuration:

SINGLE

Maximum Forward Current:

.06 A

Maximum Input Trigger Current:

.01 A

Maximum Isolation Voltage:

4170 V

Mounting Feature:

No. of Elements:

1

Maximum On State Voltage:

2.5 V

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TUBE

Peak Surge Current:

1 A

Repetitive Off-state Voltage (Peak):

800 V

Maximum Reverse Leakage Current:

.0001 A

Trade Compliance

MOC3072VM Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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