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MOC3053VM

Onsemi

MOC3053VM by Onsemi

The Onsemi MOC3053VM is a single optocoupler with a max on-state voltage of 2.5V and peak surge current of 1A. It operates b/w -40 to 85 °C, with a max isolation voltage of 4170V. Ideal for triggering devices in applications requiring high voltage protection and signal isolation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,487 parts In-Stock

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Digiode

USA . 761 parts In-Stock

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Problanco Electronics

Mexico . 7,522 parts In-Stock

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SupplyDigital Components

Austria . 5,682 parts In-Stock

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Kulean Microsystems

USA . 4,669 parts In-Stock

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Corphita

USA . 1,559 parts In-Stock

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TANS Electronics

Latvia . 423 parts In-Stock

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Corohmni

South Africa . 115 parts In-Stock

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UHIMA Technologies

Türkiye . 4 parts In-Stock

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Overview

Discover the MOC3053VM by Onsemi, a top-of-the-line optocoupler trigger device output that guarantees precision and reliability. Manufactured by Onsemi, a trusted name in the industry, this component offers unparalleled quality and performance. Ideal for a wide range of applications, this TRIAC output optocoupler is designed to meet all your needs. With its maximum isolation voltage of 4170V and peak off-state voltage of 600V, this product ensures safety and efficiency. Invest in the MOC3053VM today and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Maximum On State Voltage: 2.5 V

Low voltage drop ensures efficient operation and minimizes power consumption.

Configuration: SINGLE

Simplified setup and operation with a single configuration option.

Peak Surge Current: 1 A

High surge current handling capability for reliable performance in demanding applications.

Maximum Forward Current: 0.06 A

Suitable for low to moderate current applications, ensuring safe operation.

Optoelectronic Type: TRIAC OUTPUT OPTOCOUPLER

Triac output design provides efficient switching control for various loads.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in diverse environments.

Minimum Operating Temperature: -40 °C

Operates reliably even in extreme cold temperatures.

Maximum Input Trigger Current: 0.006 A

Low trigger current requirement for efficient control signal operation.

Repetitive Off-state Voltage (Peak): 600 V

High off-state voltage handling capability for safety and reliability.

Packing Method: TUBE

Convenient packaging for easy handling and storage.

Maximum Reverse Leakage Current: 0.0001 A

Negligible leakage current for efficient operation and reduced power loss.

Minimum Peak Off-state Voltage: 600 V

High off-state voltage rating for reliable isolation and safety.

Maximum Isolation Voltage: 4170 V

High isolation voltage rating ensures safety and protection in high voltage applications.

Mounting Feature: THROUGH HOLE MOUNT

Secure mounting option for easy installation and reliable connection.

Technical Specifications

Optocoupler Trigger Device Outputs MOC3053VM attributes and parameters. Explore more Optocoupler Trigger Device Outputs devices from Onsemi

Specs

Additional Features:

IEC-60747-5-5, UL APPROVED

Configuration:

SINGLE

Maximum Forward Current:

.06 A

Maximum Input Trigger Current:

.006 A

Maximum Isolation Voltage:

4170 V

Mounting Feature:

No. of Elements:

1

Maximum On State Voltage:

2.5 V

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TUBE

Minimum Peak Off-state Voltage:

600 V

Peak Surge Current:

1 A

Repetitive Off-state Voltage (Peak):

600 V

Maximum Reverse Leakage Current:

.0001 A

Trade Compliance

MOC3053VM Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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