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MMSZ5245BT3G

Onsemi

MMSZ5245BT3G by Onsemi

MMSZ5245BT3G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in compact electronic circuits due to its small outline package style and unidirectional polarity.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,433 parts In-Stock

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Digiode

USA . 763 parts In-Stock

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AZTECH Wire

Italy . 175 parts In-Stock

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$16.500

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Kulean Microsystems

USA . 7,899 parts In-Stock

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TANS Electronics

Latvia . 3,234 parts In-Stock

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SupplyDigital Components

Austria . 2,541 parts In-Stock

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Corphita

USA . 829 parts In-Stock

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UHIMA Technologies

Türkiye . 430 parts In-Stock

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Corohmni

South Africa . 329 parts In-Stock

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Problanco Electronics

Mexico . 70 parts In-Stock

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Overview

Upgrade your electronic projects with the MMSZ5245BT3G Zener Diode by Onsemi, a reliable and high-quality component that guarantees optimal performance. Onsemi's reputation for excellence in manufacturing ensures that you are getting a product that meets the highest standards. Zener diodes are essential in voltage regulation applications, preventing overvoltage damage and ensuring smooth operation. With a maximum voltage tolerance of 5% and a nominal reference voltage of 15V, this diode offers precision and stability. Trust Onsemi's MMSZ5245BT3G for all your voltage regulation needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY as the package body material makes the Zener diode lightweight and durable, making it suitable for various applications.

Working Test Current: 8.5 mA

The working test current of 8.5 mA ensures the reliability and stability of the Zener diode during operation, making it ideal for consistent performance in electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this Zener diode can withstand high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Power Dissipation: 0.5 W

The maximum power dissipation of 0.5 W allows the Zener diode to handle higher power levels without overheating, ensuring a longer lifespan and improved performance.

Nominal Reference Voltage: 15 V

The nominal reference voltage of 15 V provides a stable and precise voltage regulation, making this Zener diode an ideal choice for voltage regulation and protection in electronic circuits.

Technical Specifications

Zener Diodes MMSZ5245BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

16 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

15 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

8.5 mA

Trade Compliance

MMSZ5245BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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