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MMSZ47T3G

Onsemi

MMSZ47T3G by Onsemi

MMSZ47T3G by Onsemi is a Zener diode with 47V nominal reference voltage, 5% max voltage tolerance, and 170 ohm max dynamic impedance. It is ideal for applications requiring precise voltage regulation in small outline packages. With a max power dissipation of 0.5W and operating temperature range from -55 to 150 °C, it suits various electronic designs.

Median Price

$0.064

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 80,000 parts In-Stock

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Component Stockers USA

USA . 185,847 parts In-Stock

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AZTECH Wire

Italy . 729 parts In-Stock

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SupplyDigital Components

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Overview

Looking for a reliable solution for voltage regulation? Look no further than the MMSZ47T3G Zener Diode by Onsemi. With a reputation for high-quality components, Onsemi delivers products that meet stringent industry standards. Ideal for applications requiring precise voltage control, this Zener Diode offers customers value, efficiency, and consistency. Say goodbye to fluctuations in voltage with the MMSZ47T3G, designed to provide stable performance in a compact package. Trust Onsemi for all your Zener Diode needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components of the diode, increasing durability and reliability.

Working Test Current: 2 mA

Suitable for low power applications, ensuring the diode operates efficiently.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and facilitating automated assembly processes.

Maximum Voltage Tolerance: 5 %

Ensures consistent performance and reliable voltage regulation within a small tolerance range.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments, making it suitable for various applications.

Maximum Power Dissipation: 0.5 W

Can handle moderate power levels without overheating, ensuring long-term reliability.

Nominal Reference Voltage: 47 V

Provides a stable reference voltage for circuit applications, meeting specific voltage requirements.

Technical Specifications

Zener Diodes MMSZ47T3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

170 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

47 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

2 mA

Trade Compliance

MMSZ47T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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