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MMSZ2V4ET1G

Onsemi

MMSZ2V4ET1G by Onsemi

MMSZ2V4ET1G by Onsemi is a Zener diode with 2.4V nominal reference voltage and 5% max voltage tolerance. It operates at up to 150 °C, has a max power dissipation of 0.5W, and features gull wing terminals for surface mount applications. Ideal for precision voltage regulation in electronic circuits requiring stable output voltages.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

48,000

-

$0.030

$0.025

$0.023

Verical

USA . 48,000 parts In-Stock

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48,000

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Digiode

USA . 2,003 parts In-Stock

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$0.024

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$0.024

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Vyrian

USA . 6,656 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,866 parts In-Stock

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$0.022

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Corohmni

South Africa . 326 parts In-Stock

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$0.025

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326

$0.025

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AZTECH Wire

Italy . 411 parts In-Stock

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$16.140

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411

$16.140

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Continental Prestige Electronics

USA . 48,000 parts In-Stock

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$0.021

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$0.021

Problanco Electronics

Mexico . 7,892 parts In-Stock

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TANS Electronics

Latvia . 7,806 parts In-Stock

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SupplyDigital Components

Austria . 7,551 parts In-Stock

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Kulean Microsystems

USA . 3,541 parts In-Stock

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UHIMA Technologies

Türkiye . 666 parts In-Stock

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Overview

Unleash the power of precision with the MMSZ2V4ET1G by Onsemi. Crafted by a trusted manufacturer, this Zener Diode offers unparalleled quality and reliability for a wide range of applications. With a small outline package style and dual terminals, this diode delivers precise voltage regulation with a maximum voltage tolerance of 5%. Say goodbye to fluctuations and hello to stability with the MMSZ2V4ET1G. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the diode, ensuring a longer lifespan and reliability.

Working Test Current: 5 mA

Suitable for low power applications where a consistent current flow is required, making it versatile for different circuit designs.

Surface Mount: YES

Allows for easy and secure mounting on a PCB, saving space and simplifying the assembly process.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for a wide range of operating conditions.

Nominal Reference Voltage: 2.4 V

Provides a stable voltage reference for regulating circuits, ensuring consistent performance in various electronic devices.

Technical Specifications

Zener Diodes MMSZ2V4ET1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

2.4 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

MMSZ2V4ET1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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