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MMBZ5262BLT1G

Onsemi

MMBZ5262BLT1G by Onsemi

MMBZ5262BLT1G by Onsemi is a Zener diode with 51V nominal reference voltage, 5% max voltage tolerance, and 125 ohm max dynamic impedance. It is ideal for applications requiring precise voltage regulation in compact electronic circuits due to its small outline package style and unidirectional polarity.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.040

1k+ parts

$0.033

10k+ parts

$0.029

9,000

-

$0.040

$0.033

$0.029

Verical

USA . 9,000 parts In-Stock

1+ parts

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$0.037

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$0.037

Distributors (In-Stock)

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Digiode

USA . 1,060 parts In-Stock

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$0.031

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$0.031

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Vyrian

USA . 8,724 parts In-Stock

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Prism Electronics

USA . 86 parts In-Stock

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Corphita

USA . 455 parts In-Stock

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$0.030

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455

$0.030

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Corohmni

South Africa . 448 parts In-Stock

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$0.033

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448

$0.033

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AZTECH Wire

Italy . 950 parts In-Stock

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$10.050

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950

$10.050

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Continental Prestige Electronics

USA . 9,000 parts In-Stock

1+ parts

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$0.031

9,000

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$0.031

Kulean Microsystems

USA . 7,844 parts In-Stock

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7,844

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SupplyDigital Components

Austria . 7,499 parts In-Stock

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Problanco Electronics

Mexico . 5,468 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,442 parts In-Stock

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TANS Electronics

Latvia . 1,361 parts In-Stock

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UHIMA Technologies

Türkiye . 477 parts In-Stock

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Perfect Parts

USA . 96 parts In-Stock

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Overview

Enhance your electronic projects with the MMBZ5262BLT1G Zener diode by Onsemi. With a reputation for superior quality and reliability, Onsemi delivers cutting-edge technology in every product. Ideal for voltage regulation and transient suppression, this Zener diode ensures stable performance in a compact package. Its high voltage tolerance and low dynamic impedance make it perfect for a wide range of applications. Trust Onsemi to provide you with the value and benefits you need for your next project. Upgrade to the MMBZ5262BLT1G today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the diode, making it suitable for various environments.

Working Test Current: 2.5 mA

Low working test current helps in minimizing power consumption and heat generation, ensuring efficient operation.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and simplifying assembly.

Maximum Voltage Tolerance: 5 %

High voltage tolerance ensures the diode can handle variations in input voltage while maintaining stable output.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes the diode suitable for use in diverse temperature conditions without compromising performance.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, enhancing the reliability of connections.

Maximum Power Dissipation: 0.225 W

High power dissipation capability allows the diode to handle power spikes and surges, ensuring long-term reliability.

Nominal Reference Voltage: 51 V

Stable reference voltage of 51V ensures consistent operation and accurate voltage regulation in circuits.

Technical Specifications

Zener Diodes MMBZ5262BLT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

125 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

51 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

2.5 mA

Trade Compliance

MMBZ5262BLT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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