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MMBZ5230ELT1G

Onsemi

MMBZ5230ELT1G by Onsemi

MMBZ5230ELT1G by Onsemi is a Zener diode with a 4.7V nominal reference voltage and 5.11% max voltage tolerance. It operates b/w -65 to 150 °C, has a max power dissipation of 0.225W, and features a small outline package style for surface mount applications.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 23,950 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

23,950

-

$0.053

$0.044

$0.039

Verical

USA . 20,950 parts In-Stock

1+ parts

-

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$0.049

20,950

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-

-

$0.049

Distributors (In-Stock)

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Digiode

USA . 1,288 parts In-Stock

1+ parts

$0.041

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1,288

$0.041

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Vyrian

USA . 4,129 parts In-Stock

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4,129

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Distributors (Availability)

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Corphita

USA . 2,039 parts In-Stock

1+ parts

$0.039

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-

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2,039

$0.039

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Corohmni

South Africa . 459 parts In-Stock

1+ parts

$0.043

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459

$0.043

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AZTECH Wire

Italy . 111 parts In-Stock

1+ parts

$13.640

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111

$13.640

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Continental Prestige Electronics

USA . 23,950 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.042

10k+ parts

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23,950

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$0.042

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SupplyDigital Components

Austria . 4,287 parts In-Stock

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4,287

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Problanco Electronics

Mexico . 3,498 parts In-Stock

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3,498

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Kulean Microsystems

USA . 3,455 parts In-Stock

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3,455

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TANS Electronics

Latvia . 3,417 parts In-Stock

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UHIMA Technologies

Türkiye . 171 parts In-Stock

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171

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Overview

Experience the superior quality and reliability of Onsemi's MMBZ5230ELT1G Zener Diode. This versatile component offers unparalleled performance in a wide range of applications, providing customers with precise voltage regulation and protection. With a small outline package and dual terminals, this Zener diode is easy to install and use. Trust Onsemi's reputation for excellence and innovation to deliver value and peace of mind for your electronic projects. Elevate your designs with the MMBZ5230ELT1G Zener Diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good durability and resistance to environmental factors, making the product suitable for a wide range of applications.

Working Test Current: 20 mA

With a working test current of 20 mA, this Zener diode can reliably operate within this range, ensuring stable performance in various circuit configurations.

Surface Mount: YES

The surface mount capability allows for easy installation and space-saving in circuit board designs, making it convenient for compact electronic devices.

Maximum Voltage Tolerance: 5.11%

The tight maximum voltage tolerance of 5.11% ensures precise regulation of voltage levels, making it suitable for applications requiring accurate voltage control.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this Zener diode can withstand elevated temperature conditions, enhancing its reliability in demanding environments.

Diode Type: ZENER DIODE

Being a Zener diode, it offers a stable and predictable reverse voltage breakdown at a specified voltage level, making it ideal for voltage regulation and protection applications.

Technical Specifications

Zener Diodes MMBZ5230ELT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

19 ohm

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

4.7 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.11 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5230ELT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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