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MMBZ5228ELT1G

Onsemi

MMBZ5228ELT1G by Onsemi

MMBZ5228ELT1G by Onsemi is a Zener diode with a nominal reference voltage of 3.9V and max power dissipation of 0.225W. It operates in temperatures ranging from -65 to 150 °C and has a max voltage tolerance of 5.13%. This diode is ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Bristol Electronics

USA . 6,181 parts In-Stock

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Dan-Mar Components

USA . 5,381 parts In-Stock

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Vyrian

USA . 3,799 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Digiode

USA . 1,945 parts In-Stock

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PC Components Company LLC

USA . 800 parts In-Stock

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800

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AZTECH Wire

Italy . 615 parts In-Stock

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$19.080

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$19.080

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Component Stockers USA

USA . 622 parts In-Stock

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$99.990

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622

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TANS Electronics

Latvia . 6,109 parts In-Stock

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Kulean Microsystems

USA . 4,581 parts In-Stock

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SupplyDigital Components

Austria . 4,197 parts In-Stock

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Problanco Electronics

Mexico . 1,712 parts In-Stock

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Corphita

USA . 1,283 parts In-Stock

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UHIMA Technologies

Türkiye . 943 parts In-Stock

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Corohmni

South Africa . 148 parts In-Stock

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Overview

Discover the reliability and precision of the MMBZ5228ELT1G Zener Diode from Onsemi. Perfect for a wide range of applications, this high-quality component offers exceptional performance and durability. With a single configuration, small outline package style, and 3 terminals, it delivers a nominal reference voltage of 3.9V with a maximum voltage tolerance of 5.13%. Whether you're in the automotive, telecommunications, or consumer electronics industry, this Zener diode provides the value, benefits, and advantages you need to take your designs to the next level. Trust Onsemi for superior quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the zener diode lightweight and durable, ideal for various electronic applications.

Working Test Current: 20 mA

The zener diode can handle a working test current of 20 mA, ensuring reliable performance under normal operating conditions.

Surface Mount: YES

Being surface mountable, the zener diode can be easily mounted on printed circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this zener diode can withstand high-temperature environments without compromising performance.

Nominal Reference Voltage: 3.9 V

The zener diode has a nominal reference voltage of 3.9 V, providing a stable voltage regulation for electronic circuits.

Technical Specifications

Zener Diodes MMBZ5228ELT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

23 ohm

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.9 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.13 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5228ELT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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