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MMBZ5226ELT1

Onsemi

MMBZ5226ELT1 by Onsemi

MMBZ5226ELT1 by Onsemi is a Zener diode with a 3.3V nominal reference voltage and 5.15% max voltage tolerance. It has a max power dissipation of 0.225W, operates at up to 150 °C, and features a small outline package style for surface mount applications.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 62,950 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

62,950

-

$0.053

$0.044

$0.039

Verical

USA . 48,000 parts In-Stock

1+ parts

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$0.049

48,000

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-

$0.049

Distributors (In-Stock)

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Digiode

USA . 1,784 parts In-Stock

1+ parts

$0.041

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1,784

$0.041

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Vyrian

USA . 8,948 parts In-Stock

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8,948

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,118 parts In-Stock

1+ parts

$0.039

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-

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1,118

$0.039

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Corohmni

South Africa . 217 parts In-Stock

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$0.043

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217

$0.043

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AZTECH Wire

Italy . 403 parts In-Stock

1+ parts

$16.450

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403

$16.450

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Continental Prestige Electronics

USA . 62,950 parts In-Stock

1+ parts

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100+ parts

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$0.042

10k+ parts

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62,950

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$0.042

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SupplyDigital Components

Austria . 6,518 parts In-Stock

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6,518

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Problanco Electronics

Mexico . 3,588 parts In-Stock

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3,588

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Kulean Microsystems

USA . 3,331 parts In-Stock

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3,331

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TANS Electronics

Latvia . 1,043 parts In-Stock

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1,043

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UHIMA Technologies

Türkiye . 936 parts In-Stock

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936

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Overview

Unleash the power of precision with Onsemi's MMBZ5226ELT1 Zener Diode. Crafted with high-quality materials and cutting-edge technology, this diode ensures unparalleled performance and reliability in a variety of applications. From voltage regulation to signal processing, this product offers customers the value, benefits, and advantages they need to take their projects to the next level. Trust Onsemi for top-tier components that deliver unmatched results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the Zener diode, making it suitable for various applications.

Working Test Current: 20 mA

The high working test current ensures stable and reliable performance of the Zener diode in different operating conditions.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation of the Zener diode on PCBs, saving space and reducing assembly time.

Maximum Voltage Tolerance: 5.15 %

The tight voltage tolerance of 5.15% ensures accurate and consistent voltage regulation by the Zener diode.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this Zener diode can withstand harsh environmental conditions and operate reliably in high-temperature applications.

Maximum Dynamic Impedance: 28 ohm

The low maximum dynamic impedance of 28 ohms ensures efficient voltage regulation and minimal power loss in the circuit.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides good solderability and conductivity, ensuring secure connections and optimal performance of the Zener diode.

Nominal Reference Voltage: 3.3 V

The nominal reference voltage of 3.3V makes this Zener diode suitable for various voltage regulation applications, providing a stable reference voltage.

Technical Specifications

Zener Diodes MMBZ5226ELT1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

28 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.15 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5226ELT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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