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MMBZ5221ELT1

Onsemi

MMBZ5221ELT1 by Onsemi

MMBZ5221ELT1 by Onsemi is a Zener diode with a 2.4V nominal reference voltage and 5% max voltage tolerance. It operates at a max temperature of 150 °C, has a working test current of 20mA, and features a small outline package style for surface mount applications.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 20,830 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

20,830

-

$0.053

$0.044

$0.039

Verical

USA . 20,830 parts In-Stock

1+ parts

-

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$0.049

20,830

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-

$0.049

Distributors (In-Stock)

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Digiode

USA . 1,629 parts In-Stock

1+ parts

$0.041

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1,629

$0.041

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Vyrian

USA . 5,671 parts In-Stock

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5,671

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Distributors (Availability)

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Corphita

USA . 1,927 parts In-Stock

1+ parts

$0.039

100+ parts

-

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1,927

$0.039

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Corohmni

South Africa . 420 parts In-Stock

1+ parts

$0.043

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-

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420

$0.043

-

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AZTECH Wire

Italy . 1,173 parts In-Stock

1+ parts

$15.520

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1,173

$15.520

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Continental Prestige Electronics

USA . 20,830 parts In-Stock

1+ parts

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100+ parts

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$0.042

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20,830

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$0.042

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TANS Electronics

Latvia . 7,063 parts In-Stock

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7,063

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Kulean Microsystems

USA . 4,497 parts In-Stock

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4,497

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SupplyDigital Components

Austria . 1,328 parts In-Stock

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1,328

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UHIMA Technologies

Türkiye . 489 parts In-Stock

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489

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Problanco Electronics

Mexico . 86 parts In-Stock

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86

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Overview

Experience the superior quality and reliability of the MMBZ5221ELT1 by Onsemi, a leading manufacturer in the industry. This Zener diode offers unmatched performance and efficiency for a wide range of applications. Whether you are looking to regulate voltage in electronic circuits or provide protection against transient voltage spikes, this product delivers exceptional value. Trust Onsemi's expertise and choose the MMBZ5221ELT1 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and is resistant to external elements, making it suitable for various environments.

Working Test Current: 20 mA

With a working test current of 20 mA, this Zener diode is reliable and can handle moderate levels of current effectively.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving space and facilitating automated assembly processes.

Maximum Voltage Tolerance: 5%

A tight maximum voltage tolerance of 5% ensures precision and consistency in voltage regulation applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this Zener diode can withstand high-temperature environments without compromising performance.

Maximum Power Dissipation: 0.225 W

The maximum power dissipation of 0.225 W indicates that this Zener diode can handle power efficiently and prevent overheating.

Diode Type: ZENER DIODE

Being a Zener diode, it is specifically designed for voltage regulation applications and can maintain a constant voltage across its terminals.

Nominal Reference Voltage: 2.4 V

With a nominal reference voltage of 2.4 V, this Zener diode is suitable for applications requiring precise voltage regulation at that specific voltage level.

Technical Specifications

Zener Diodes MMBZ5221ELT1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

30 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

2.4 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMBZ5221ELT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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