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MM5Z12VST1G

Onsemi

MM5Z12VST1G by Onsemi

MM5Z12VST1G by Onsemi is a Zener diode with 12V nominal reference voltage, 2.09% max voltage tolerance, and 80 ohm max dynamic impedance. It is used in applications requiring precise voltage regulation, such as power supplies and voltage references.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 10,079 parts In-Stock

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AZTECH Wire

Italy . 1,059 parts In-Stock

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$18.830

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USA . 543 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 6,447 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 3,640 parts In-Stock

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TANS Electronics

Latvia . 2,129 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 897 parts In-Stock

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A-Z Elektronik GmbH

Germany . 810 parts In-Stock

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Corohmni

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Overview

Unlock the power of precision with the MM5Z12VST1G Zener Diode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability. Ideal for various applications, this Zener diode ensures stable voltage regulation and protection for your electronic devices. With its high precision and low reverse current, this product offers unmatched value and benefits to customers seeking superior performance and efficiency. Upgrade your electronics with the MM5Z12VST1G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diode, making it suitable for various operating conditions.

Working Test Current: 5 mA

With a working test current of 5 mA, this product can reliably handle moderate levels of current flow without being damaged.

Surface Mount: YES

Being surface mountable makes this diode easy to install and can save space on the circuit board.

Maximum Reverse Current: 0.1 uA

With a low maximum reverse current, this diode exhibits excellent reverse leakage characteristics, ensuring efficient performance.

Reverse Test Voltage: 8 V

The reverse test voltage of 8 V indicates the voltage at which the diode can withstand in the reverse direction, providing protection against reverse voltage.

Maximum Voltage Tolerance: 2.09 %

The low voltage tolerance of 2.09% ensures consistent and accurate voltage regulation in the circuit.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2 W, this diode can effectively handle power dissipation without getting overheated.

Technical Specifications

Zener Diodes MM5Z12VST1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

80 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Maximum Knee Impedance:

25 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

8 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2.09 %

Working Test Current:

5 mA

Trade Compliance

MM5Z12VST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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