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MM5Z3V6T1G

Onsemi

MM5Z3V6T1G by Onsemi

MM5Z3V6T1G by Onsemi is a Zener diode with a reverse test voltage of 1V and max power dissipation of 0.5W. It is ideal for applications requiring precise voltage regulation, such as in power supplies and voltage reference circuits. With a nominal reference voltage of 3.6V, it offers reliable performance across a wide temperature range from -65°C to 150°C.

Median Price

$0.028

Lifecycle Status

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22

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1k+

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Newark

USA . 96 parts In-Stock

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Mouser Electronics

USA . 3,327 parts In-Stock

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$0.130

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$0.042

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3,327

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$0.048

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DigiKey

USA . 21,614 parts In-Stock

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Flip Electronics (Authorized)

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Arrow

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Verical

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Chip1Stop

Japan . 33,000 parts In-Stock

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Farnell

UK . 17,604 parts In-Stock

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Avnet

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Element14

Singapore . 12,004 parts In-Stock

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Rochester

USA . 2,770 parts In-Stock

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2,770

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Digiode

USA . 979 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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TME

Poland . 4,500 parts In-Stock

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$0.047

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$0.036

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$0.033

4,500

$0.130

$0.047

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$0.033

Cyclops Electronics Ltd

UK . 60,000 parts In-Stock

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Chip Stock

USA . 48,500 parts In-Stock

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USA . 45,000 parts In-Stock

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Vyrian

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Bristol Electronics

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NAC Semi

USA . 9,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,811 parts In-Stock

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Corohmni

South Africa . 67 parts In-Stock

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Semicontronic

India . 22,121 parts In-Stock

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Ampacity Inc.

Singapore . 20,820 parts In-Stock

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Corphita

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Advanced Electronics

New Zealand . 200 parts In-Stock

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Argo Parts USA

USA . 2,640 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,874 parts In-Stock

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Component Stockers USA

USA . 51,156 parts In-Stock

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Perfect Parts

USA . 108,708 parts In-Stock

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ChipstoGo Electronic ltd

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iodParts Technologies Inc.

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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Lixinc

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iBuyXS LLC

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Authorized Procurement Solutions

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Continental Prestige Electronics

USA . 6,830 parts In-Stock

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Problanco Electronics

Mexico . 6,552 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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XScomponents

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TANS Electronics

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Kulean Microsystems

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Netroflash

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UHIMA Technologies

Türkiye . 100 parts In-Stock

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GreenTree Electronics

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Overview

Experience superior quality and reliability with the MM5Z3V6T1G Zener Diode by Onsemi. Designed to meet the highest industry standards, this single-configured diode offers unparalleled performance in a compact rectangular package. Ideal for a wide range of applications, this diode is perfect for voltage regulation, surge protection, and more. Trust in Onsemi's expertise and innovation to deliver a product that provides exceptional value, reliability, and peace of mind to customers. Elevate your projects with the MM5Z3V6T1G Zener Diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package durable and lightweight, ideal for various applications.

Config: SINGLE

The single configuration simplifies the design and installation process, saving time and effort.

Working Test Current: 5 mA

With a working test current of 5 mA, this Zener diode is suitable for low-power applications.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly.

Maximum Reverse Current: 5 uA

The low maximum reverse current ensures high efficiency and reliable performance.

Package Shape: RECTANGULAR

The rectangular shape provides a compact and space-saving design for tight PCB layouts.

Reverse Test Voltage: 1 V

The low reverse test voltage makes this Zener diode suitable for low-voltage protection applications.

No. of Terminals: 2

With two terminals, this Zener diode is easy to connect and integrate into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it suitable for applications where space is limited.

Maximum Voltage Tolerance: 5.56 %

The tight maximum voltage tolerance ensures accurate voltage regulation in various applications.

Maximum Knee Impedance: 1000 ohm

The low maximum knee impedance allows for efficient voltage regulation and stability.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this Zener diode can withstand challenging environmental conditions.

Maximum Dynamic Impedance: 90 ohm

The low maximum dynamic impedance ensures stable and reliable performance in dynamic circuits.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows for reliable operation in cold environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance.

Terminal Position: DUAL

The dual terminal position allows for flexible installation and connection options.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5 W, this Zener diode can handle moderate power levels.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures proper soldering and reliability during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures secure solder joints and reliable connections.

Diode Type: ZENER DIODE

This Zener diode type is ideal for voltage regulation and protection applications.

Maximum Forward Voltage (VF): 0.9 V

The low maximum forward voltage ensures minimal voltage drop across the diode.

Nominal Reference Voltage: 3.6 V

The 3.6 V nominal reference voltage provides accurate voltage regulation in various circuits.

Technology: ZENER

The Zener technology used in this diode ensures stable and precise voltage regulation.

Terminal Form: FLAT

The flat terminal form simplifies soldering and ensures a secure connection.

Polarity: UNIDIRECTIONAL

The unidirectional polarity simplifies circuit design and ensures proper voltage regulation.

Diode Element Material: SILICON

The silicon diode element material provides excellent performance and reliability in various applications.

Technical Specifications

Zener Diodes MM5Z3V6T1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

90 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Maximum Knee Impedance:

1000 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.6 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5.56 %

Working Test Current:

5 mA

Trade Compliance

MM5Z3V6T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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