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MM3Z18VST1

Onsemi

MM3Z18VST1 by Onsemi

MM3Z18VST1 by Onsemi is a Zener diode with 18V nominal reference voltage and 2.19% max voltage tolerance. It operates at up to 150 °C, has a max power dissipation of 0.2W, and a dynamic impedance of 45 ohm. Ideal for applications requiring precise voltage regulation in compact electronic circuits.

Median Price

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Lifecycle Status

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3

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1k+

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AZTECH Wire

Italy . 972 parts In-Stock

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Problanco Electronics

Mexico . 8,256 parts In-Stock

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TANS Electronics

Latvia . 3,983 parts In-Stock

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SupplyDigital Components

Austria . 1,935 parts In-Stock

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Kulean Microsystems

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Corohmni

South Africa . 273 parts In-Stock

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UHIMA Technologies

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Corphita

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Overview

Discover the Onsemi MM3Z18VST1, a top-notch Zener diode that guarantees quality and reliability. Manufactured by Onsemi, a trusted name in electronic components, this diode offers unmatched performance and precision in a wide range of applications. Whether you're looking for voltage regulation or transient protection, this single-config Zener diode delivers exceptional value and benefits to customers. With its small outline package style and high operating temperature, the MM3Z18VST1 is the perfect choice for your electronics projects. Trust Onsemi for superior technology and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the Zener diode, ensuring a longer lifespan and reliable performance.

Working Test Current: 5 mA

The working test current of 5 mA ensures that the Zener diode can handle a sufficient amount of current during operation, making it suitable for various applications.

Maximum Voltage Tolerance: 2.19 %

The low maximum voltage tolerance of 2.19% ensures precise voltage regulation, making this Zener diode a reliable choice for voltage reference and regulation circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this Zener diode can withstand high temperature environments, providing stable performance even under challenging conditions.

Maximum Power Dissipation: 0.2 W

The maximum power dissipation of 0.2 W indicates the amount of power the Zener diode can safely dissipate without getting damaged, making it suitable for low to moderate power applications.

Nominal Reference Voltage: 18 V

With a nominal reference voltage of 18 V, this Zener diode is ideal for voltage regulation and reference applications requiring a stable and precise voltage output.

Technical Specifications

Zener Diodes MM3Z18VST1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

45 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

18 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2.19 %

Working Test Current:

5 mA

Trade Compliance

MM3Z18VST1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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