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MJW3281AG

Onsemi

MJW3281AG by Onsemi

MJW3281AG by Onsemi is a NPN Power BJT with 230V VCEO, 15A IC, and 200W Ptot. Ideal for amplifier applications due to its high power dissipation capability and low hFE of 12. The transistor operates at up to 150°C, making it suitable for demanding environments.

Median Price

$5.050

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 273 parts In-Stock

1+ parts

$4.310

100+ parts

$2.070

1k+ parts

$1.780

10k+ parts

-

273

$4.310

$2.070

$1.780

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Newark

USA . 183 parts In-Stock

1+ parts

$5.790

100+ parts

$3.550

1k+ parts

$3.060

10k+ parts

-

183

$5.790

$3.550

$3.060

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Mouser Electronics

USA . 2,086 parts In-Stock

1+ parts

$5.850

100+ parts

-

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-

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2,086

$5.850

-

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DigiKey

USA . 86 parts In-Stock

1+ parts

$5.850

100+ parts

$3.314

1k+ parts

$2.345

10k+ parts

$2.262

86

$5.850

$3.314

$2.345

$2.262

Element14

Singapore . 273 parts In-Stock

1+ parts

$7.360

100+ parts

$3.100

1k+ parts

$2.980

10k+ parts

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273

$7.360

$3.100

$2.980

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Chip1Stop

Japan . 10 parts In-Stock

1+ parts

$7.390

100+ parts

-

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10

$7.390

-

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Verical

USA . 180 parts In-Stock

1+ parts

-

100+ parts

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$2.351

10k+ parts

$2.170

180

-

-

$2.351

$2.170

Master Electronics

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$3.310

1k+ parts

$2.980

10k+ parts

$2.940

150

-

$3.310

$2.980

$2.940

Flip Electronics (Authorized)

USA . 91 parts In-Stock

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-

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91

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-

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RS (Exports)

UK . 50 parts In-Stock

1+ parts

-

100+ parts

$2.800

1k+ parts

$2.399

10k+ parts

-

50

-

$2.800

$2.399

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Rochester

USA . 49 parts In-Stock

1+ parts

-

100+ parts

$1.860

1k+ parts

$1.670

10k+ parts

$1.570

49

-

$1.860

$1.670

$1.570

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 963 parts In-Stock

1+ parts

$1.976

100+ parts

-

1k+ parts

-

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963

$1.976

-

-

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Nova Conductors

Japan . 42 parts In-Stock

1+ parts

$2.890

100+ parts

-

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42

$2.890

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Chip Stock

USA . 32,000 parts In-Stock

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32,000

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Sensible Micro Corp

USA . 965 parts In-Stock

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965

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Vyrian

USA . 272 parts In-Stock

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272

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NAC Semi

USA . 180 parts In-Stock

1+ parts

-

100+ parts

$2.880

1k+ parts

$2.660

10k+ parts

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180

-

$2.880

$2.660

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IBS Electronics

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$3.913

1k+ parts

$2.931

10k+ parts

$2.875

150

-

$3.913

$2.931

$2.875

ComSIT Distribution GmbH

Germany . 145 parts In-Stock

1+ parts

-

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145

-

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Flip Electronics

USA . 91 parts In-Stock

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91

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 882 parts In-Stock

1+ parts

$1.100

100+ parts

-

1k+ parts

-

10k+ parts

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882

$1.100

-

-

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Semicontronic

India . 233 parts In-Stock

1+ parts

$1.770

100+ parts

$1.726

1k+ parts

$1.717

10k+ parts

-

233

$1.770

$1.726

$1.717

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Ampacity Inc.

Singapore . 109 parts In-Stock

1+ parts

$1.770

100+ parts

-

1k+ parts

-

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109

$1.770

-

-

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Corphita

USA . 1,385 parts In-Stock

1+ parts

$1.872

100+ parts

-

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-

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1,385

$1.872

-

-

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Corohmni

South Africa . 250 parts In-Stock

1+ parts

$2.080

100+ parts

-

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250

$2.080

-

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Component Stockers USA

USA . 36,373 parts In-Stock

1+ parts

$2.120

100+ parts

$2.040

1k+ parts

$1.920

10k+ parts

$1.800

36,373

$2.120

$2.040

$1.920

$1.800

Continental Prestige Electronics

USA . 97 parts In-Stock

1+ parts

$2.410

100+ parts

$1.780

1k+ parts

-

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97

$2.410

$1.780

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Argo Parts USA

USA . 3,125 parts In-Stock

1+ parts

$2.890

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3,125

$2.890

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Microchip USA

USA . 6,208 parts In-Stock

1+ parts

$29.445

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6,208

$29.445

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Lixinc

USA . 14,746 parts In-Stock

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14,746

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Problanco Electronics

Mexico . 3,638 parts In-Stock

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3,638

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TANS Electronics

Latvia . 3,523 parts In-Stock

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3,523

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Perfect Parts

USA . 1,456 parts In-Stock

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1,456

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SupplyDigital Components

Austria . 916 parts In-Stock

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916

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Kulean Microsystems

USA . 703 parts In-Stock

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703

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UHIMA Technologies

Türkiye . 474 parts In-Stock

1+ parts

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474

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Robosynatics

Brazil . 471 parts In-Stock

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471

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Lucentia Tech

USA . 471 parts In-Stock

1+ parts

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100+ parts

$1.276

1k+ parts

$1.250

10k+ parts

$1.250

471

-

$1.276

$1.250

$1.250

Eastek

USA . 360 parts In-Stock

1+ parts

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360

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Kepictronics

USA . 300 parts In-Stock

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300

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Unleash the power of innovation with the MJW3281AG by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor exemplifies excellence in performance and reliability. Ideal for amplifier applications, this NPN transistor offers a seamless integration into your projects, delivering a maximum power dissipation of 200W and a collector current of 15A. Trust in Onsemi's legacy of quality and innovation to elevate your designs to new heights. Embrace the value and benefits that the MJW3281AG brings, and experience unparalleled efficiency and performance like never before. Elevate your projects with Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other electronic circuits, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design and integration due to single configuration.

Transistor Application: AMPLIFIER

Specifically designed for use in amplifiers, ensuring optimum performance for amplification purposes.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration within electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability allows the transistor to handle substantial power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides stability and ease of mounting for industrial applications.

Minimum DC Current Gain (hFE): 12

Minimum DC current gain ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 230 V

High collector-emitter voltage rating allows for voltage handling capability in various applications.

Transistor Element Material: SILICON

Silicon material ensures high performance, reliability, and compatibility with modern electronic circuits.

Maximum Collector Current (IC): 15 A

Capable of handling high collector currents, ideal for power applications and amplification.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and reduces assembly complexity.

Case Connection: COLLECTOR

Case connection to collector simplifies circuit layout and enhances thermal performance.

Nominal Transition Frequency (fT): 30 MHz

High nominal transition frequency ensures fast switching speeds and high frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJW3281AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

12

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJW3281AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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