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MCT9001300W

Onsemi

MCT9001300W by Onsemi

MCT9001300W by Onsemi is a 2-channel optocoupler with separate configuration. It has a max forward current of 0.06A, isolation voltage of 5000V, and operates b/w -55 to 100 °C. Ideal for applications requiring high voltage isolation and signal transmission in harsh environments.

Median Price

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Lifecycle Status

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Digiode

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Problanco Electronics

Mexico . 5,685 parts In-Stock

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TANS Electronics

Latvia . 4,493 parts In-Stock

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Kulean Microsystems

USA . 2,571 parts In-Stock

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Supply Digital

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SupplyDigital Components

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Corphita

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UHIMA Technologies

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Overview

Experience the superior quality and reliability of Onsemi's MCT9001300W optocoupler transistor outputs. With a maximum forward current of 0.06A and an impressive minimum current transfer ratio of 50%, this 2-channel configuration offers optimal performance in a variety of applications. From industrial controls to power supplies, trust in the value and benefits that this product provides. Ensure seamless operation and peace of mind with the MCT9001300W by Onsemi.

Feature Benefit Bullets

Configuration: SEPARATE, 2 CHANNELS

Having separate channels allows for independent control of each channel, providing flexibility and versatility in various applications.

Maximum Forward Current: 0.06 A

With a maximum forward current of 0.06 A, this optocoupler can handle a decent amount of current, making it suitable for many low to medium power applications.

Optoelectronic Type: TRANSISTOR OUTPUT OPTOCOUPLER

Transistor output optocouplers offer high speed and good linearity, making them ideal for applications requiring switching or amplification.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100 °C, this optocoupler can operate in high temperature environments without any issues.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C ensures that this optocoupler can also function effectively in cold environments.

Maximum Power Dissipation: 0.15 W

The low power dissipation of 0.15 W indicates that this optocoupler operates efficiently, minimizing heat generation and energy consumption.

Minimum Current Transfer Ratio: 50 %

With a minimum current transfer ratio of 50%, this optocoupler provides reliable signal transfer between the input and output, ensuring accurate communication.

Maximum Dark Current: 100 nA

The low dark current of 100 nA indicates that this optocoupler has minimal leakage current when the LED is off, ensuring signal integrity in low light conditions.

No. of Elements: 2

Having two elements allows for dual-channel operation or redundancy, providing backup in case one channel fails.

Packing Method: TUBE

The tube packaging method ensures safe transportation and storage of the optocouplers, protecting them from damage and contamination.

Minimum Collector-emitter Breakdown Voltage: 55 V

The minimum collector-emitter breakdown voltage of 55 V ensures that this optocoupler can handle higher voltage loads without breakdown.

Maximum Isolation Voltage: 5000 V

The high isolation voltage of 5000 V ensures safe separation between the input and output, providing protection against voltage spikes and noise.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the optocoupler on a PCB, ensuring stability during operation.

Maximum Forward Voltage: 1.3 V

The low forward voltage of 1.3 V minimizes power loss and heat dissipation in the optocoupler, improving efficiency and reliability.

Maximum On State Current: 0.06 A

With a maximum on-state current of 0.06 A, this optocoupler can handle the load current without any issues, ensuring reliable operation under load.

Technical Specifications

Optocoupler Transistor Outputs MCT9001300W attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED

Minimum Collector-emitter Breakdown Voltage:

55 V

Configuration:

SEPARATE, 2 CHANNELS

Minimum Current Transfer Ratio:

50 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

1.3 V

Maximum Isolation Voltage:

5000 V

Mounting Feature:

No. of Elements:

2

Maximum On State Current:

.06 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Packing Method:

TUBE

Maximum Power Dissipation:

.15 W

Trade Compliance

MCT9001300W Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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