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MCT9001300

Onsemi

MCT9001300 by Onsemi

The Onsemi MCT9001300 is a 2-channel optocoupler with separate configuration. It has a max forward current of 0.06A, min operating temp of -55 °C, and max isolation voltage of 5000V. Ideal for applications requiring high isolation voltage and reliable signal transmission in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

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1k+

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Vyrian

USA . 2,855 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 8,393 parts In-Stock

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TANS Electronics

Latvia . 6,697 parts In-Stock

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Problanco Electronics

Mexico . 6,691 parts In-Stock

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Kulean Microsystems

USA . 6,524 parts In-Stock

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Corphita

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Supply Digital

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UHIMA Technologies

Türkiye . 136 parts In-Stock

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Corohmni

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Overview

Experience superior quality and unmatched performance with the Onsemi MCT9001300 Optocoupler Transistor Outputs. Designed by a leading manufacturer in the industry, this product offers two separate channels for versatile applications. With a minimum current transfer ratio of 50% and maximum isolation voltage of 5000V, you can trust in the reliability and efficiency of this optoelectronic device. Whether you're in the automotive, industrial, or consumer electronics sector, the MCT9001300 provides value, benefits, and advantages that will elevate your projects to new heights. Trust in Onsemi to deliver cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Configuration: SEPARATE, 2 CHANNELS

Having separate channels allows for independent control of each channel, increasing flexibility in application usage.

Maximum Forward Current: 0.06 A

High maximum forward current allows for handling of larger loads, making this optocoupler suitable for various applications.

Optoelectronic Type: TRANSISTOR OUTPUT OPTOCOUPLER

Transistor output optocoupler provides high speed and stability in signal isolation, making it reliable for different circuit designs.

Maximum Operating Temperature: 100 °C

Wide temperature range ensures reliable performance in harsh environments.

Minimum Operating Temperature: -55 °C

Capable of operating in low-temperature conditions, increasing its versatility.

Maximum Power Dissipation: 0.15 W

Efficient power dissipation helps in maintaining the temperature of the optocoupler within safe limits.

Minimum Current Transfer Ratio: 50 %

High current transfer ratio ensures accurate signal transmission between input and output.

Maximum Dark Current: 100 nA

Low dark current prevents false triggering and maintains signal integrity.

No. of Elements: 2

Presence of two elements increases the functionality and capability of the optocoupler.

Packing Method: TUBE

Tube packaging provides protection during transit and storage, ensuring optimal performance upon installation.

Minimum Collector-emitter Breakdown Voltage: 55 V

A high breakdown voltage allows for reliable operation in high voltage applications.

Maximum Isolation Voltage: 5000 V

High isolation voltage ensures safety and protection against electrical hazards.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting simplifies installation and provides mechanical stability.

Maximum Forward Voltage: 1.3 V

Low forward voltage drop helps in reducing power loss and improving efficiency.

Maximum On State Current: 0.06 A

High on-state current capability ensures reliable switching of loads.

Technical Specifications

Optocoupler Transistor Outputs MCT9001300 attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED

Minimum Collector-emitter Breakdown Voltage:

55 V

Configuration:

SEPARATE, 2 CHANNELS

Minimum Current Transfer Ratio:

50 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

1.3 V

Maximum Isolation Voltage:

5000 V

Mounting Feature:

No. of Elements:

2

Maximum On State Current:

.06 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Packing Method:

TUBE

Maximum Power Dissipation:

.15 W

Trade Compliance

MCT9001300 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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