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MCR12LNG

Onsemi

MCR12LNG by Onsemi

MCR12LNG by Onsemi is a Single SCR with 12A Max On-state Current, 8mA Max DC Gate Trigger Current, and 100A Non Repetitive Peak On-state Current. It is used in applications requiring high power control such as industrial motor drives and lighting systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 20,460 parts In-Stock

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20,460

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Vyrian

USA . 4,040 parts In-Stock

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4,040

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Sensible Micro Corp

USA . 2,367 parts In-Stock

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2,367

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Digiode

USA . 122 parts In-Stock

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122

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Distributors (Availability)

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AZTECH Wire

Italy . 1,013 parts In-Stock

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$14.810

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1,013

$14.810

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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QUARKTWIN TECHNOLOGY LTD

USA . 8,603 parts In-Stock

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8,603

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SupplyDigital Components

Austria . 5,351 parts In-Stock

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Problanco Electronics

Mexico . 1,506 parts In-Stock

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Corphita

USA . 1,383 parts In-Stock

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Kulean Microsystems

USA . 1,382 parts In-Stock

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Corohmni

South Africa . 289 parts In-Stock

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TANS Electronics

Latvia . 58 parts In-Stock

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UHIMA Technologies

Türkiye . 23 parts In-Stock

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Overview

Unleash the power of innovation with the MCR12LNG by Onsemi, a high-quality Silicon Controlled Rectifier that promises reliability and performance like no other. Manufactured by Onsemi, a trusted leader in semiconductor technology, this SCR is designed to meet the demands of various applications with its impressive features and durability. From industrial machinery to consumer electronics, the MCR12LNG offers customers unmatched value, benefits, and advantages that elevate their products to the next level. Trust in Onsemi's expertise and choose the MCR12LNG for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and protection for the component, making it suitable for various environments.

Maximum DC Gate Trigger Current: 8 mA

Low gate trigger current allows for efficient and precise control of the device, improving overall performance.

Configuration: SINGLE

SINGLE configuration simplifies the setup and installation process, making it user-friendly.

Non Repetitive Peak On-state Current: 100 A

High on-state current capacity enables the device to handle heavy loads and provide reliable operation.

Maximum On-state Current: 12 A

With a maximum on-state current of 12 A, this SCR can support moderate power applications effectively.

Repetitive Peak Reverse Voltage: 800 V

High reverse voltage capability ensures protection against voltage spikes and enhances the device's reliability.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this SCR can withstand high-temperature environments, increasing its versatility.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating provides enhanced insulation and protection against overvoltage situations.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR12LNG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

8 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

20 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

12 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR12LNG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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