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MCR100-6RLRAG

Onsemi

MCR100-6RLRAG by Onsemi

MCR100-6RLRAG by Onsemi is a SCR with max DC gate trigger current of 0.2mA, non-repetitive peak on-state current of 10A, and max repetitive peak reverse voltage of 400V. It is used in applications requiring reliable switching capabilities at temperatures ranging from -40 °C to 110°C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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Vyrian

USA . 3,786 parts In-Stock

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Digiode

USA . 1,885 parts In-Stock

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Component Stockers USA

USA . 23 parts In-Stock

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$0.090

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23

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Advanced Electronics

New Zealand . 88 parts In-Stock

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$5.803

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$5.281

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$4.758

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88

$5.803

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$4.758

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AZTECH Wire

Italy . 719 parts In-Stock

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$17.480

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719

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Perfect Parts

USA . 12,979 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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TANS Electronics

Latvia . 4,210 parts In-Stock

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SupplyDigital Components

Austria . 4,000 parts In-Stock

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Problanco Electronics

Mexico . 2,989 parts In-Stock

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ChipstoGo Electronic ltd

UK . 1,642 parts In-Stock

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Kulean Microsystems

USA . 1,540 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Corphita

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Corohmni

South Africa . 473 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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UHIMA Technologies

Türkiye . 19 parts In-Stock

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Overview

Enhance your electronics projects with the reliable MCR100-6RLRAG SCR by Onsemi. Crafted with precision and quality, this silicon-controlled rectifier offers seamless performance and durability. Whether you're designing power supplies, motor control systems, or lighting controls, this product ensures consistent and efficient operation. With a maximum RMS on-state current of 0.8A and a repetitive peak off-state voltage of 400V, the possibilities are endless. Trust Onsemi for innovation and excellence in every component. Upgrade to the MCR100-6RLRAG and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the SCR, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current means the SCR can be easily controlled with minimal input, making it efficient and reliable in various applications.

Configuration: SINGLE

The single configuration simplifies the setup and installation process, making it easier to use for most users.

Non Repetitive Peak On-state Current: 10 A

The high peak on-state current allows the SCR to handle heavy loads and sudden surges in current without malfunctioning.

Package Shape: ROUND

The round package shape provides a compact and space-saving design, ideal for installations where space is limited.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers easy and secure connections, ensuring stable operation in various mounting configurations.

Maximum On-state Current: 0.8 A

The high on-state current rating allows the SCR to handle continuous current flow without overheating or degrading performance.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal power loss and efficient operation, making the SCR suitable for energy-efficient applications.

Repetitive Peak Reverse Voltage: 400 V

High reverse voltage rating provides protection against backflow of current, enhancing the reliability and safety of the SCR.

No. of Terminals: 3

Having three terminals simplifies the connectivity and control of the SCR in various circuit configurations, offering flexibility in applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers easy handling and installation, suitable for a wide range of mounting options and environments.

Maximum Operating Temperature: 110 °C

High operating temperature range allows the SCR to perform reliably in hot conditions without risking damage or malfunction.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier) ensures precise control and regulation of current flow, making it an ideal choice for power electronics applications.

Minimum Operating Temperature: -40 °C

Low operating temperature range allows the SCR to operate efficiently in cold environments without compromising performance.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides good conductivity and corrosion resistance, ensuring long-term reliability and stable connections.

Terminal Position: BOTTOM

Bottom terminal position offers easy access and secure connections, suitable for various installation setups and configurations.

Maximum RMS On-state Current: 0.8 A

High RMS on-state current rating ensures stable and continuous current conduction, making the SCR reliable for long-term operation.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage ensures easy control and activation of the SCR, making it suitable for low-power applications.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating provides protection against voltage spikes and overloads, ensuring the SCR's durability and reliability.

Maximum Holding Current: 5 mA

Having a holding current of 5 mA ensures the SCR remains in the on-state, providing stability and reliable operation in various load conditions.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures secure soldering and stable connections during manufacturing and assembly processes, enhancing product quality.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR100-6RLRAG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR100-6RLRAG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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