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MCR100-6G

Onsemi

MCR100-6G by Onsemi

MCR100-6G by Onsemi is a single SCR with max on-state current of 0.8A and non-repetitive peak on-state current of 10A. It operates b/w -40 to 110 °C, ideal for applications requiring precise gate trigger voltage control in circuits with up to 400V reverse voltage requirements.

Median Price

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Lifecycle Status

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11

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Chip Stock

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ComSIT Distribution GmbH

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Cogito LLC

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Digiode

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Infinite Electronics LLP

India . 500 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 249 parts In-Stock

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Whistler Technology

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EMSNET

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A&K Electronics

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Bristol Electronics

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AZTECH Wire

Italy . 1,081 parts In-Stock

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Component Stockers USA

USA . 246 parts In-Stock

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$99.990

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TANS Electronics

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A-Z Elektronik GmbH

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Problanco Electronics

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UHIMA Technologies

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Overview

Discover the ultimate power control solution with the MCR100-6G by Onsemi. As a leading manufacturer of Silicon Controlled Rectifiers (SCR), Onsemi guarantees top-notch quality and reliability in every product. Ideal for a wide range of applications, this SCR offers customers unmatched performance and efficiency. With a maximum on-state current of 0.8 A and a non-repetitive peak on-state current of 10 A, the MCR100-6G provides exceptional value and benefits to users. Upgrade your power management system today with Onsemi's MCR100-6G for seamless operation and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the SCR, making it durable and reliable for long-term use.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient and accurate control of the SCR, suitable for various applications.

Configuration: SINGLE

Simplified single configuration makes it easy to integrate and operate in different circuit designs.

Non Repetitive Peak On-state Current: 10 A

Capable of handling high peak current levels, ensuring reliable performance under heavy load conditions.

Maximum On-state Current: 0.8 A

Moderate on-state current rating suitable for medium-power applications, balancing performance and efficiency.

Repetitive Peak Reverse Voltage: 400 V

High reverse voltage rating provides protection against reverse polarity and ensures stable operation in diverse setups.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows the SCR to function effectively in both low and high-temperature environments.

Minimum Operating Temperature: -40 °C

Operational at low temperatures, making it suitable for applications that require reliable performance in cold environments.

Maximum RMS On-state Current: 0.8 A

Efficiently manages RMS current flow to prevent overheating and ensure safe operation in demanding conditions.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating ensures reliable switching capabilities, making it ideal for various power control applications.

Maximum Holding Current: 5 mA

Maintains a stable holding current level, preventing unintentional turn-off and ensuring continuous operation when needed.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR100-6G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.1 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trigger Device Type:

SCR

Trade Compliance

MCR100-6G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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