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MC74LVXT4052DTR2G

Onsemi

MC74LVXT4052DTR2G by Onsemi

MC74LVXT4052DTR2G by Onsemi is a CMOS differential multiplexer with 4 channels, operating at -55 to 125 °C. It has a max on-state resistance of 120 ohm and requires a nominal voltage of 3.3 V. This military-grade IC is ideal for applications requiring low power consumption and precise signal switching in compact designs.

Median Price

$0.340

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 4,431 parts In-Stock

1+ parts

$0.340

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$0.178

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$0.150

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4,431

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Mouser Electronics

USA . 2,500 parts In-Stock

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$0.340

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$0.179

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$0.150

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$0.138

2,500

$0.340

$0.179

$0.150

$0.138

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Chip Stock

USA . 41,000 parts In-Stock

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Flip Electronics

USA . 12,500 parts In-Stock

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Digiode

USA . 2,381 parts In-Stock

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Vyrian

USA . 903 parts In-Stock

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AZTECH Wire

Italy . 903 parts In-Stock

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$14.180

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903

$14.180

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Component Stockers USA

USA . 418 parts In-Stock

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$99.990

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418

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Kulean Microsystems

USA . 8,191 parts In-Stock

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SupplyDigital Components

Austria . 5,827 parts In-Stock

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TANS Electronics

Latvia . 3,548 parts In-Stock

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Problanco Electronics

Mexico . 778 parts In-Stock

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Microchip USA

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Corphita

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Corohmni

South Africa . 71 parts In-Stock

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UHIMA Technologies

Türkiye . 55 parts In-Stock

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Overview

Discover the MC74LVXT4052DTR2G by Onsemi, a top-quality differential multiplexer that offers unmatched performance and reliability. With a MILITARY grade temperature rating and CMOS technology, this small outline switch is perfect for a variety of applications. From communication systems to industrial automation, this versatile component provides seamless integration and efficient operation. Trust Onsemi's reputation for excellence and elevate your projects with the MC74LVXT4052DTR2G. Experience the value and benefits it brings to your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Nominal Supply Voltage (Vsup): 3.3 V

The 3.3V supply voltage is a common standard in many electronic systems, ensuring compatibility with a wide range of devices.

No. of Channels: 4

Having 4 channels provides flexibility in routing multiple input signals to desired output paths, making it versatile for various signal processing applications.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, making the multiplexer efficient and reliable in signal switching operations.

Technical Specifications

Multiplexers & Switches MC74LVXT4052DTR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

16

Maximum On-state Resistance (Ron):

120 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.16 mA

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Trade Compliance

MC74LVXT4052DTR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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