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MC74LVX8051DTR2

Onsemi

MC74LVX8051DTR2 by Onsemi

MC74LVX8051DTR2 by Onsemi is a CMOS single-ended multiplexer with 8 channels. It operates at a supply voltage range of 2.5V to 6V, offering low on-state resistance of 50 ohm and fast switch-on time of 15ns. Ideal for military-grade applications requiring high isolation and precise signal routing in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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AZTECH Wire

Italy . 633 parts In-Stock

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SupplyDigital Components

Austria . 6,392 parts In-Stock

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Problanco Electronics

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Microchip USA

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Futuretech Components

Singapore . 2,182 parts In-Stock

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Kulean Microsystems

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Corphita

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TANS Electronics

Latvia . 1,091 parts In-Stock

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UHIMA Technologies

Türkiye . 464 parts In-Stock

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Overview

Unlock the power of efficient signal routing with the MC74LVX8051DTR2 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality multiplexers & switches that are versatile and reliable. Ideal for a wide range of applications, this product offers customers exceptional value with its fast switching times, low on-state resistance, and excellent isolation capabilities. Experience seamless performance and enhanced functionality with the MC74LVX8051DTR2, designed to meet your needs with precision and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term usage.

Surface Mount: YES

Makes installation easier and more efficient.

Nominal Supply Voltage (Vsup): 3 V

Optimal voltage for efficient operation.

No. of Terminals: 16

Allows for versatile connectivity options.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for various environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high performance.

Technical Specifications

Multiplexers & Switches MC74LVX8051DTR2 attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

16

Nominal Off-state Isolation:

37 dB

Nominal On-state Resistance Match:

25 ohm

Maximum On-state Resistance (Ron):

50 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Signal Current:

.01 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.16 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

30 ns

Maximum Switch-on Time:

15 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

4.4 mm

Trade Compliance

MC74LVX8051DTR2 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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