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MC74HCT4852ADR2G

Onsemi

MC74HCT4852ADR2G by Onsemi

MC74HCT4852ADR2G by Onsemi is a CMOS dual multiplexer with 4 channels, 550 ohm max on-state resistance, and 40 ns switch-on/off time. It operates at -55 to 125 °C and is ideal for military-grade applications requiring high-speed signal switching in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,210 parts In-Stock

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Digiode

USA . 623 parts In-Stock

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Distributors (Availability)

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Component Stockers USA

USA . 30,017 parts In-Stock

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$2.880

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$2.880

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AZTECH Wire

Italy . 518 parts In-Stock

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$8.300

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518

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Problanco Electronics

Mexico . 8,324 parts In-Stock

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SupplyDigital Components

Austria . 7,418 parts In-Stock

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TANS Electronics

Latvia . 7,227 parts In-Stock

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Corphita

USA . 1,742 parts In-Stock

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Kulean Microsystems

USA . 485 parts In-Stock

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UHIMA Technologies

Türkiye . 267 parts In-Stock

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Corohmni

South Africa . 172 parts In-Stock

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Overview

Enhance your electronic designs with the MC74HCT4852ADR2G by Onsemi! This versatile multiplexer & switch offers top-notch quality and reliability from a trusted manufacturer. Ideal for a wide range of applications, this product provides seamless functionality and performance. Experience the value it brings to your projects with its innovative features, benefits, and advantages. Upgrade your designs today with the MC74HCT4852ADR2G and see the difference it makes in your creations!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and resistance to environmental factors, making this product reliable for various applications.

Surface Mount: YES

Surface mount design allows for easy and convenient installation on circuit boards, saving space and time in assembly.

No. of Functions: 2

Having multiple functions in one device can simplify circuit design and reduce component count, leading to cost savings and improved efficiency.

Nominal Supply Voltage (Vsup): 5 V

Operating at a standard 5V supply voltage ensures compatibility with common power sources and makes integration into existing systems seamless.

Maximum Operating Temperature: 125 °C

High maximum operating temperature tolerance allows for reliable performance in harsh environmental conditions, making this product suitable for a variety of applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product efficient and reliable for signal processing applications.

Technical Specifications

Multiplexers & Switches MC74HCT4852ADR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

4

No. of Functions:

2

No. of Terminals:

16

Nominal On-state Resistance Match:

80 ohm

Maximum On-state Resistance (Ron):

550 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.04 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Maximum Switch-off Time:

40 ns

Maximum Switch-on Time:

40 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

7.5 mm

Trade Compliance

MC74HCT4852ADR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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