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MC74HC4316ANG

Onsemi

MC74HC4316ANG by Onsemi

MC74HC4316ANG by Onsemi is a 4-function SPST multiplexer with 16 terminals. It operates b/w -55 to 125 °C, with Vsup ranging from 2V to 6V. Ideal for military-grade applications requiring CMOS technology and break-before-make switching.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,300 parts In-Stock

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Digiode

USA . 1,559 parts In-Stock

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ABC Electronics Ltd.

UK . 275 parts In-Stock

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AZTECH Wire

Italy . 830 parts In-Stock

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$12.290

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QUARKTWIN TECHNOLOGY LTD

USA . 17,475 parts In-Stock

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SupplyDigital Components

Austria . 3,614 parts In-Stock

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Kulean Microsystems

USA . 3,371 parts In-Stock

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Problanco Electronics

Mexico . 1,754 parts In-Stock

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TANS Electronics

Latvia . 1,658 parts In-Stock

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UHIMA Technologies

Türkiye . 984 parts In-Stock

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Corphita

USA . 552 parts In-Stock

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Corohmni

South Africa . 361 parts In-Stock

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Microchip USA

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Overview

Upgrade your electronic designs with the MC74HC4316ANG multiplexer and switch from Onsemi. With a reputation for high-quality products, Onsemi delivers reliable components that enhance the performance of your devices. This versatile component is ideal for various applications in electronics, offering seamless switching between multiple signals. Experience improved efficiency and functionality with the MC74HC4316ANG, providing value and benefits that meet your needs. Elevate your projects with Onsemi's top-notch technology and superior design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ensuring long-term reliability.

No. of Functions: 4

With 4 functions in one device, it provides versatility and flexibility in switching operations.

Nominal Supply Voltage (Vsup): 4.5 V

Operating at a nominal supply voltage of 4.5V makes it compatible with standard power sources, ensuring easy integration.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for use in a variety of environments without the risk of overheating.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making it efficient and reliable in operation.

Technical Specifications

Multiplexers & Switches MC74HC4316ANG attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e3

Length:

19.175 mm

Maximum Negative Supply Voltage (Vsup):

0 V

Minimum Negative Supply Voltage (Vsup):

-6 V

Nominal Negative Supply Voltage (Vsup):

-4.5 V

Normal Position (V):

NO

No. of Channels:

1

No. of Functions:

4

No. of Terminals:

16

Nominal Off-state Isolation:

40 dB

Nominal On-state Resistance Match:

25 ohm

Maximum On-state Resistance (Ron):

130 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6,GND/-6

Qualification:

Not Qualified

Maximum Seated Height:

4.44 mm

Sub-Category:

Multiplexers or Switches

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

4.5 V

Surface Mount:

NO

Maximum Switch-off Time:

60 ns

Maximum Switch-on Time:

60 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

MC74HC4316ANG Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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