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MC4558VDR2

Onsemi

MC4558VDR2 by Onsemi

MC4558VDR2 by Onsemi is a dual operational amplifier with 7500uV max input offset voltage and 90dB nominal CMRR. It operates at ±15V supplies, has 1.6V/μs min slew rate, and is ideal for industrial applications requiring high gain bandwidth amplification in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,385 parts In-Stock

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Vyrian

USA . 2,363 parts In-Stock

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TANS Electronics

Latvia . 4,320 parts In-Stock

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Problanco Electronics

Mexico . 2,802 parts In-Stock

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Kulean Microsystems

USA . 2,545 parts In-Stock

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SupplyDigital Components

Austria . 2,454 parts In-Stock

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Corphita

USA . 1,019 parts In-Stock

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UHIMA Technologies

Türkiye . 66 parts In-Stock

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Corohmni

South Africa . 50 parts In-Stock

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Overview

Enhance your electronic designs with the MC4558VDR2 by Onsemi, a top-notch operational amplifier that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in semiconductor technology, this op amp delivers exceptional precision and efficiency for a wide range of applications. Whether you're working on audio equipment, instrumentation, or control systems, the MC4558VDR2 provides superior functionality and versatility. Experience the value of high-quality components with Onsemi's MC4558VDR2 and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection for the internal components of the operational amplifier, ensuring a longer lifespan and reliable performance.

Nominal Unity Gain Bandwidth: 2800 kHz

This high bandwidth allows for a wide range of frequencies to be accurately amplified, making this operational amplifier suitable for various applications requiring precise signal processing.

Nominal Supply Voltage / Vsup (V): 15

With a supply voltage of 15V, this operational amplifier can handle a decent amount of power while operating efficiently.

Minimum Voltage Gain: 20000

The high voltage gain ensures that even small input signals can be amplified significantly, making this operational amplifier suitable for applications requiring high signal amplification.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise characteristics, making this operational amplifier well-suited for applications requiring accurate signal processing.

Technical Specifications

Operational Amplifiers (Op Amps) MC4558VDR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

7500 uV

Minimum Voltage Gain:

20000

Minimum Slew Rate:

1 V/us

Nominal Slew Rate:

1.6 V/us

Peak Bias Current:

800 nA

Maximum Bias Current (IIB) @25 °C:

500 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

5.6 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

MC4558VDR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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