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MC4558CDR2

Onsemi

MC4558CDR2 by Onsemi

MC4558CDR2 by Onsemi is a dual operational amplifier with 7500uV max input offset voltage, 90dB CMRR, and 1.6V/us min slew rate. Ideal for commercial applications requiring precise signal amplification in a compact package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Lantek

USA . 5,000 parts In-Stock

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Vyrian

USA . 1,317 parts In-Stock

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Digiode

USA . 503 parts In-Stock

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503

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Metaverse IC Inc.

Canada . 29,420 parts In-Stock

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Problanco Electronics

Mexico . 8,108 parts In-Stock

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TANS Electronics

Latvia . 6,649 parts In-Stock

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SupplyDigital Components

Austria . 5,451 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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Kulean Microsystems

USA . 4,680 parts In-Stock

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Kepictronics

USA . 641 parts In-Stock

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Corphita

USA . 136 parts In-Stock

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UHIMA Technologies

Türkiye . 126 parts In-Stock

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Corohmni

South Africa . 90 parts In-Stock

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Overview

Elevate your audio and signal processing projects with the MC4558CDR2 by Onsemi, a top-of-the-line operational amplifier that delivers exceptional quality and performance. Manufactured by Onsemi, a trusted name in the industry, this Op Amp offers unparalleled precision and reliability for a wide range of applications. From audio equipment to instrumentation, this versatile component provides superior functionality and efficiency. Discover the value and benefits of using the MC4558CDR2 and take your projects to the next level with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, ensuring long-term performance.

Maximum Input Offset Voltage: 7500 uV

Low input offset voltage helps in minimizing errors in circuit applications, leading to accurate output results.

Maximum Average Bias Current (IIB): 0.8 uA

Low bias current ensures minimal power consumption and helps in maintaining stability in various circuit configurations.

Surface Mount: YES

Allows for easy and efficient integration onto circuit boards, saving space and facilitating automated assembly processes.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio ensures effective suppression of common mode noise, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 15

Operates at a standard supply voltage, making it compatible with a wide range of applications.

Frequency Compensation: YES

Helps in stabilizing the operational amplifier's bandwidth and phase response, ensuring optimal performance across different operating conditions.

Minimum Voltage Gain: 15000

High voltage gain amplifies small input signals effectively, making it suitable for applications requiring signal amplification.

Technology: BIPOLAR

Utilization of bipolar technology provides fast response times and low noise levels, enhancing the operational amplifier's performance.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying signals accurately with low distortion, making it a reliable choice for various signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) MC4558CDR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

7500 uV

Minimum Voltage Gain:

15000

Minimum Slew Rate:

1 V/us

Nominal Slew Rate:

1.6 V/us

Peak Bias Current:

800 nA

Maximum Bias Current (IIB) @25 °C:

500 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Maximum Supply Current:

6.7 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

MC4558CDR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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