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MC33503SNT1G

Onsemi

MC33503SNT1G by Onsemi

MC33503SNT1G by Onsemi is a 5-terminal Op Amp with Vsup of 5V. It offers low bias current (0.001uA) and high voltage gain (25k). Ideal for industrial applications, it operates b/w -40 to 105 °C, with a unity bandwidth of 4MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,060 parts In-Stock

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Digiode

USA . 1,639 parts In-Stock

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Prism Electronics

USA . 333 parts In-Stock

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AZTECH Wire

Italy . 608 parts In-Stock

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$20.180

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,587 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,404 parts In-Stock

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TANS Electronics

Latvia . 6,182 parts In-Stock

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Kulean Microsystems

USA . 5,571 parts In-Stock

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Problanco Electronics

Mexico . 4,352 parts In-Stock

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Kepictronics

USA . 3,710 parts In-Stock

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Corphita

USA . 1,642 parts In-Stock

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SupplyDigital Components

Austria . 1,456 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 394 parts In-Stock

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Corohmni

South Africa . 161 parts In-Stock

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Microchip USA

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Overview

Experience the exceptional performance and reliability of the MC33503SNT1G operational amplifier by Onsemi. Crafted with precision and expertise, this versatile component is perfect for a wide range of applications requiring precise signal amplification and control. With a maximum supply voltage of 7V and low-bias technology, this Op Amp offers superior functionality and efficiency. Whether you're designing audio equipment, sensor interfaces, or control systems, this product delivers unmatched quality and value, making it the ideal choice for your next project. Trust Onsemi for innovative solutions that elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and can withstand various environmental conditions, making the product reliable and long-lasting.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage ensures accuracy in signal processing, making it suitable for precision applications.

Surface Mount: YES

Surface mount technology makes installation easier and enables compact designs, saving space on PCBs.

Nominal Common Mode Reject Ratio: 75 dB

High common mode rejection ratio helps in reducing noise and interference from the input signal, improving signal quality.

Minimum Slew Rate: 1.8 V/us

Fast slew rate allows for rapid changes in output voltage, enhancing the amplifier's response time.

Nominal Unity Gain Bandwidth: 4000 kHz

Higher unity gain bandwidth allows for amplification of higher frequency signals with minimal distortion.

Technology: NMOS

NMOS technology offers low power consumption and high speed performance, making the amplifier efficient and responsive.

Amplifier Type: OPERATIONAL AMPLIFIER

As a versatile and widely used amplifier, operational amplifiers provide high gain and accurate signal processing for a variety of applications.

Technical Specifications

Operational Amplifiers (Op Amps) MC33503SNT1G attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

NMOS

Power Supply:

5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

1.8 V/us

Nominal Slew Rate:

3 V/us

Peak Bias Current:

1 nA

Maximum Bias Current (IIB) @25 °C:

1 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

2.25 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

MC33503SNT1G Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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