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MC33503SNT1

Onsemi

MC33503SNT1 by Onsemi

MC33503SNT1 by Onsemi is a 5-terminal Op Amp with Vsup of 5V. It offers low bias, high gain (25k), and fast slew rate (1.8V/us). Ideal for industrial applications requiring precision amplification in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,322 parts In-Stock

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Digiode

USA . 2,138 parts In-Stock

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2,138

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Distributors (Availability)

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AZTECH Wire

Italy . 511 parts In-Stock

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$10.910

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511

$10.910

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QUARKTWIN TECHNOLOGY LTD

USA . 8,584 parts In-Stock

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SupplyDigital Components

Austria . 6,295 parts In-Stock

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6,295

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Problanco Electronics

Mexico . 5,999 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,762 parts In-Stock

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5,762

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TANS Electronics

Latvia . 5,051 parts In-Stock

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5,051

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Corphita

USA . 1,697 parts In-Stock

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UHIMA Technologies

Türkiye . 772 parts In-Stock

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Metaverse IC Inc.

Canada . 591 parts In-Stock

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Corohmni

South Africa . 154 parts In-Stock

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Kulean Microsystems

USA . 131 parts In-Stock

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Microchip USA

USA . 103 parts In-Stock

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Overview

Discover the exceptional quality and performance of the MC33503SNT1 operational amplifier by Onsemi, a leading manufacturer in the industry. Ideal for a wide range of applications, this product offers unparalleled value with its low bias current, high voltage gain, and frequency compensation features. Whether you are designing audio equipment, sensor interfaces, or precision instrumentation, this amplifier provides reliability and precision to enhance your projects. Upgrade your designs with the MC33503SNT1 and experience the benefits of superior functionality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage ensures accurate and precise signal processing in the amplifier.

Nominal Common Mode Reject Ratio: 75 dB

High common mode rejection ratio helps in eliminating common mode noise and interference for cleaner output signals.

Minimum Slew Rate: 1.8 V/us

Fast slew rate allows for quick response to input signal changes, making the amplifier suitable for high-frequency applications.

Nominal Unity Gain Bandwidth: 4000 kHz

High unity gain bandwidth ensures stability and high-frequency performance of the amplifier.

Technology: NMOS

NMOS technology offers low power consumption and high speed operation, making the operational amplifier efficient and reliable.

Technical Specifications

Operational Amplifiers (Op Amps) MC33503SNT1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

NMOS

Power Supply:

5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

1.8 V/us

Nominal Slew Rate:

3 V/us

Peak Bias Current:

1 nA

Maximum Bias Current (IIB) @25 °C:

1 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

2.25 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.059 in (1.5 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

MC33503SNT1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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